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<p>In this study, phosphorous-doped magnesium oxide thin films were deposited using the spray pyrolysis technique and subsequently annealed in a CVD furnace under an argon atmosphere and phosphorus vapor. For preparation of the spray solution, manganese phosphate (Mn<sub>3</sub>(PO<sub>4</sub>)<sub>2</sub>) at a defined ratio, along with the phosphoric acid (H<sub>3</sub>PO<sub>4</sub>) to enhance solubility, was dissolved in deionized water as the initial solution. In the second stage, red phosphorus powder as the doping source and nitric acid were used as co-solvents. The phosphorous-doped magnesium oxide thin films were deposited at substrate temperatures of T<sub>s</sub> = 400&#xa0;°C, 450&#xa0;°C, and 500&#xa0;°C, followed by post annealing at T = 400&#xa0;°C in a CVD furnace under argon gas and phosphorus vapor using two approaches: without and with phosphorus powder add to the solution. The films were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), and UV–Vis optical spectroscopy. The XRD patterns indicated that, prior to the addition of phosphorus powder to the solution, manganese oxide phases formed at elevated temperatures. After annealing, most of the thin films exhibited mixed phosphorus magnesium oxide phase compositions, including binary and ternary manganese-phosphorus compounds. FESEM images of the Mn–O–P thin films revealed a porous, sponge-like structure in most films before annealing, which is consistent with desirable properties for water splitting and decontamination applications. UV–Vis spectroscopy results showed that the addition of phosphorus to the precursor solution reduced the optical transparency of the thin films. Before annealing, the optical transparency of the phosphorus-doped manganese oxide thin films increased with both impurity concentration and substrate temperature. After annealing, the thin films exhibited irregular optical transmittance behavior. The optical bandgap of the thin films before annealing increased with temperature and ranged from 2.27 to 2.70&#xa0;eV. Following annealing, the optical bandgap decreased, falling within the range of 2.02&#xa0;eV to 2.34&#xa0;eV.</p>

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Phosphorus doped magnesium oxide thin films for electrochemical applications: the influence of phosphorus on optical properties and multi-phase structures

  • 期刊论文

  • 发表日期：

    2026年1月7日

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  • Abbas Daryani,
  • M. M. Bagheri Mohagheghi,
  • A. Shirpay

摘要

In this study, phosphorous-doped magnesium oxide thin films were deposited using the spray pyrolysis technique and subsequently annealed in a CVD furnace under an argon atmosphere and phosphorus vapor. For preparation of the spray solution, manganese phosphate (Mn3(PO4)2) at a defined ratio, along with the phosphoric acid (H3PO4) to enhance solubility, was dissolved in deionized water as the initial solution. In the second stage, red phosphorus powder as the doping source and nitric acid were used as co-solvents. The phosphorous-doped magnesium oxide thin films were deposited at substrate temperatures of Ts = 400 °C, 450 °C, and 500 °C, followed by post annealing at T = 400 °C in a CVD furnace under argon gas and phosphorus vapor using two approaches: without and with phosphorus powder add to the solution. The films were characterized using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), and UV–Vis optical spectroscopy. The XRD patterns indicated that, prior to the addition of phosphorus powder to the solution, manganese oxide phases formed at elevated temperatures. After annealing, most of the thin films exhibited mixed phosphorus magnesium oxide phase compositions, including binary and ternary manganese-phosphorus compounds. FESEM images of the Mn–O–P thin films revealed a porous, sponge-like structure in most films before annealing, which is consistent with desirable properties for water splitting and decontamination applications. UV–Vis spectroscopy results showed that the addition of phosphorus to the precursor solution reduced the optical transparency of the thin films. Before annealing, the optical transparency of the phosphorus-doped manganese oxide thin films increased with both impurity concentration and substrate temperature. After annealing, the thin films exhibited irregular optical transmittance behavior. The optical bandgap of the thin films before annealing increased with temperature and ranged from 2.27 to 2.70 eV. Following annealing, the optical bandgap decreased, falling within the range of 2.02 eV to 2.34 eV.