<p>Perovskite light-emitting diodes (PeLEDs) have garnered significant research interest owing to their high fluorescence quantum yield, excellent color purity, and the simplicity of tuning the emission color. In this study, the two-dimensional layered V<sub>2</sub>CT<sub>x</sub> MXene was incorporated into the perovskite emissive layer in order to improve the morphology of perovskite films, passivate perovskite defects, and ultimately optimize the luminescence performance of PeLEDs. The excellent properties of this additive were exploited to alter the perovskite emissive layer, thereby increasing the luminous efficiency of the fabricated devices. Experimental results show that when 0.03&#xa0;mg/mL V<sub>2</sub>CT<sub>x</sub> is added, the maximum luminance of PeLEDs increases from 2439&#xa0;cd/m<sup>2</sup> in the reference devices to 3716&#xa0;cd/m<sup>2</sup>, and the maximum current efficiency (CE) significantly rises from 4.18&#xa0;cd/A to 8.32&#xa0;cd/A. The analysis reveals that the addition of a suitable content of V<sub>2</sub>CT<sub>x</sub> can improve the morphology of the perovskite film, optimize the energy level alignment, and passivate the internal defects in the perovskite emissive layer, thus reducing the defect-assisted non-radiative recombination process and enhancing the luminance efficiency of the device. An experimental basis for the development of PeLEDs is provided by this research.</p>

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Boosting the performance of perovskite light-emitting diodes by integrating V2CTx into the emissive layer

  • Zhenyang Wang,
  • Hui Zhang,
  • Zhixing Chen,
  • Xingyue Zhang,
  • Yuanming Zhou,
  • Fei Mei

摘要

Perovskite light-emitting diodes (PeLEDs) have garnered significant research interest owing to their high fluorescence quantum yield, excellent color purity, and the simplicity of tuning the emission color. In this study, the two-dimensional layered V2CTx MXene was incorporated into the perovskite emissive layer in order to improve the morphology of perovskite films, passivate perovskite defects, and ultimately optimize the luminescence performance of PeLEDs. The excellent properties of this additive were exploited to alter the perovskite emissive layer, thereby increasing the luminous efficiency of the fabricated devices. Experimental results show that when 0.03 mg/mL V2CTx is added, the maximum luminance of PeLEDs increases from 2439 cd/m2 in the reference devices to 3716 cd/m2, and the maximum current efficiency (CE) significantly rises from 4.18 cd/A to 8.32 cd/A. The analysis reveals that the addition of a suitable content of V2CTx can improve the morphology of the perovskite film, optimize the energy level alignment, and passivate the internal defects in the perovskite emissive layer, thus reducing the defect-assisted non-radiative recombination process and enhancing the luminance efficiency of the device. An experimental basis for the development of PeLEDs is provided by this research.