Annealing effect on structural and gas-sensing properties of RF magnetron-sputtered ZnO thin films
摘要
In the present study, ZnO thin films were prepared using RF magnetron sputtering and annealed at temperatures of 150 °C, 300 °C, and 450 °C. The physical properties of the as-grown and annealed ZnO films were studied using XRD, UV–visible, FESEM, and EDS characterization techniques. In addition, the ethanol gas-sensing properties of the films were investigated at room temperature under UV illumination. XRD confirmed enhanced wurtzite crystallinity with (002) orientation for the sample annealed at 300 °C, crystallite size increasing from 6.4 to 13.2 nm, and microstrain decreasing to 0.0089. FESEM showed uniform grains (72 ± 12 nm for the sample annealed at 300 °C); EDS verified the purity of the prepared samples. Band gap narrowed from 3.38 to 3.25 eV upon annealing. Under UV irradiation (365 nm, 2.67 mW cm−2), the 300 °C-annealed film exhibited n-type behavior with 18.5% sensitivity, 12 s response, 35 s recovery, and < 5% cycle variation to 1500 ppm ethanol at room temperature. Selectivity to ethanol over acetone and NO2 was confirmed.