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<p>Bismuth selenide (Bi<sub>2</sub>Se<sub>3</sub>), a layered chalcogenide, is a promising thermoelectric material whose performance is strongly influenced by the densification method. In this study, nanostructured Bi<sub>2</sub>Se<sub>3</sub> was synthesized and consolidated using cold pressing, hot pressing, and spark plasma sintering methods. The structural, electrical, and thermal transport properties of the samples were systematically evaluated. Temperature-dependent Hall measurements provided insight into carrier concentration and mobility. The hot-pressed sample exhibited the highest mobility of 576 cm<sup>2</sup>/V s, which is ~ 41 and 51% higher than that of the cold-pressed and spark plasma sintered samples, attributed to an increased mean free path. The temperature-dependent electrical conductivity and Seebeck coefficient were analyzed, revealing a maximum power factor of 552.7&#xa0;μW/mK<sup>2</sup> at 550&#xa0;K for the hot-pressed sample. A low total thermal conductivity of 0.51 W/mK at 403&#xa0;K was observed for the cold-pressed Bi<sub>2</sub>Se<sub>3</sub> sample. Acoustic phonon scattering was indicated by weighted mobility fitting, which yielded temperature dependencies of <i>T</i><sup><i>−</i>1.31</sup> and <i>T</i><sup><i>−</i>1</sup> for the cold-pressed and hot-pressed samples. Our findings suggest that the hot-pressed Bi<sub>2</sub>Se<sub>3</sub> sample exhibited an improved thermoelectric figure of merit (<i>zT</i>) of 0.18 at 510&#xa0;K.</p>

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Comparative study of densification techniques for tailoring the thermoelectric behavior of Bi2Se3

  • 期刊论文

  • 发表日期：

    2026年1月29日

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  • Kowsalya Senthil Kumar,
  • K. Arun,
  • J. Archana,
  • Navaneethan Mani,
  • Senthil Kumar Eswaran

摘要

Bismuth selenide (Bi2Se3), a layered chalcogenide, is a promising thermoelectric material whose performance is strongly influenced by the densification method. In this study, nanostructured Bi2Se3 was synthesized and consolidated using cold pressing, hot pressing, and spark plasma sintering methods. The structural, electrical, and thermal transport properties of the samples were systematically evaluated. Temperature-dependent Hall measurements provided insight into carrier concentration and mobility. The hot-pressed sample exhibited the highest mobility of 576 cm2/V s, which is ~ 41 and 51% higher than that of the cold-pressed and spark plasma sintered samples, attributed to an increased mean free path. The temperature-dependent electrical conductivity and Seebeck coefficient were analyzed, revealing a maximum power factor of 552.7 μW/mK2 at 550 K for the hot-pressed sample. A low total thermal conductivity of 0.51 W/mK at 403 K was observed for the cold-pressed Bi2Se3 sample. Acoustic phonon scattering was indicated by weighted mobility fitting, which yielded temperature dependencies of T−1.31 and T−1 for the cold-pressed and hot-pressed samples. Our findings suggest that the hot-pressed Bi2Se3 sample exhibited an improved thermoelectric figure of merit (zT) of 0.18 at 510 K.