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<p>In this study, high-performance MIS Schottky photodiodes were using a novel Sr-modified ZrO<sub>2</sub> interfacial layer synthesized via the Jet Nebulizer Spray Pyrolysis (JNSP) technique. Sr incorporation (3, 6, 9wt%) systematically tailored the structural and optical characteristics of ZrO<sub>2</sub>, enabling a transition to highly uniform cubic-phase films with refined crystallite size (17 to 10&#xa0;nm), enhanced UV absorption, and bandgap narrowing to 3.90&#xa0;eV. FESEM, EDAX and XPS analyses confirmed the formation of smooth, defect-minimized surfaces with stable Zr<sup>4</sup>⁺ O<sup>2</sup>⁻ Sr<sup>3</sup>⁺ bonding environments. The optimized Cu/ZrO<sub>2</sub>@Sr/n-Si diode (9 wt% Sr) exhibited markedly improved transport behavior, achieving an ideality factor of 3.63, barrier height of 0.76&#xa0;eV, and significantly enhanced photosensitivity, responsivity, and quantum efficiency, alongside a detectivity of 4.94 × 10<sup>7</sup> Jones. This work demonstrates, for the first time, that Sr-engineered ZrO<sub>2</sub> acts as a highly effective high-k interlayer, enabling substantial performance enhancement over undoped and RE-doped counterparts, establishing a new pathway for next-generation UV photodetectors and MIS-based optoelectronic devices.</p>

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Upgrading of photo-detectivity in MIS Schottky barrier diodes through Sr interfacial layer incorporation for photovoltaic applications

  • 期刊论文

  • 发表日期：

    2026年1月9日

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  • P. Gayathri,
  • V. Balasubramani,
  • D. Siva Priya,
  • S. Alfaify,
  • Mohd Shkir

摘要

In this study, high-performance MIS Schottky photodiodes were using a novel Sr-modified ZrO2 interfacial layer synthesized via the Jet Nebulizer Spray Pyrolysis (JNSP) technique. Sr incorporation (3, 6, 9wt%) systematically tailored the structural and optical characteristics of ZrO2, enabling a transition to highly uniform cubic-phase films with refined crystallite size (17 to 10 nm), enhanced UV absorption, and bandgap narrowing to 3.90 eV. FESEM, EDAX and XPS analyses confirmed the formation of smooth, defect-minimized surfaces with stable Zr4⁺ O2⁻ Sr3⁺ bonding environments. The optimized Cu/ZrO2@Sr/n-Si diode (9 wt% Sr) exhibited markedly improved transport behavior, achieving an ideality factor of 3.63, barrier height of 0.76 eV, and significantly enhanced photosensitivity, responsivity, and quantum efficiency, alongside a detectivity of 4.94 × 107 Jones. This work demonstrates, for the first time, that Sr-engineered ZrO2 acts as a highly effective high-k interlayer, enabling substantial performance enhancement over undoped and RE-doped counterparts, establishing a new pathway for next-generation UV photodetectors and MIS-based optoelectronic devices.