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<p>The mechanisms underlying perpendicular magnetic anisotropy (PMA) and the anomalous Hall effect (AHE) were systematically investigated in [Co₂FeSi (<i>t</i><sub>CFS</sub>)/Pt]<i>ₙ</i> multilayer films. These films were fabricated by magnetron sputtering with varying Co₂FeSi layer ranging from 0.4 to 1.2&#xa0;nm, as well as different cycle numbers for the [Co₂FeSi/Pt]<sub><i>n</i></sub> structure (<i>n</i> = 1–7). When <i>n&#xa0;</i>=&#xa0;4 and the Co₂FeSi layer is 0.6&#xa0;nm thick, the multilayer films exhibit optimal PMA characteristics, with a magnetic anisotropy energy density <i>K</i><sub>eff</sub> of 1.83&#xa0;×&#xa0;10<sup>6</sup> erg/cm<sup>3</sup>. By tuning the cycle number, the PMA strength reaches its maximum at <i>n</i> &#xa0;=&#xa0; 6, where <i>K</i><sub>eff</sub> attains a value of 2.10&#xa0;×&#xa0;10<sup>6</sup> erg/cm<sup>3</sup>. Moreover, the longitudinal resistivity <InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({\rho }_{\text{xx}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>ρ</mi> <mtext>xx</mtext> </msub> </math></EquationSource> </InlineEquation> increases with temperature, while the anomalous Hall resistivity <InlineEquation ID="IEq2"> <EquationSource Format="TEX">\({\rho }_{\text{AH}}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>ρ</mi> <mtext>AH</mtext> </msub> </math></EquationSource> </InlineEquation> exhibits non-monotonic behavior resulting from the competition between interface effects and bulk effects. Based on the scaling relationship of the AHE, the contributions from different scattering mechanisms have been calculated. Results indicate that skew scattering and side-jump scattering have opposing influences on the AHE, with skew-scattering demonstrating a more pronounced contribution. This study provides both experimental and theoretical insights for the design of high-performance spintronic devices based on Heusler alloy/heavy-metal heterostructures.</p>

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Perpendicular magnetic anisotropy in [Co2FeSi/Pt]n multilayer films without annealing

  • 期刊论文

  • 发表日期：

    2025年12月29日

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  • Xue Wang,
  • Zhihao Liu,
  • Yafan Wan,
  • Li Ma,
  • Xiaomeng Wang,
  • Fu Zheng,
  • Lili Lang

摘要

The mechanisms underlying perpendicular magnetic anisotropy (PMA) and the anomalous Hall effect (AHE) were systematically investigated in [Co₂FeSi (tCFS)/Pt]ₙ multilayer films. These films were fabricated by magnetron sputtering with varying Co₂FeSi layer ranging from 0.4 to 1.2 nm, as well as different cycle numbers for the [Co₂FeSi/Pt]n structure (n = 1–7). When n = 4 and the Co₂FeSi layer is 0.6 nm thick, the multilayer films exhibit optimal PMA characteristics, with a magnetic anisotropy energy density Keff of 1.83 × 106 erg/cm3. By tuning the cycle number, the PMA strength reaches its maximum at n  =  6, where Keff attains a value of 2.10 × 106 erg/cm3. Moreover, the longitudinal resistivity \({\rho }_{\text{xx}}\) ρ xx increases with temperature, while the anomalous Hall resistivity \({\rho }_{\text{AH}}\) ρ AH exhibits non-monotonic behavior resulting from the competition between interface effects and bulk effects. Based on the scaling relationship of the AHE, the contributions from different scattering mechanisms have been calculated. Results indicate that skew scattering and side-jump scattering have opposing influences on the AHE, with skew-scattering demonstrating a more pronounced contribution. This study provides both experimental and theoretical insights for the design of high-performance spintronic devices based on Heusler alloy/heavy-metal heterostructures.