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<p>Aluminum (Al)-doped zinc oxide (AZO) films were prepared via atomic layer deposition at 250&#xa0;°C to explore the impact of Al content on their optical, structural, and electrical characteristics. X-ray diffraction patterns indicated that the films crystallized in a hexagonal wurtzite phase exhibiting prominent diffraction peaks corresponding to the (100), (002), and (101) planes. Among these, the (002) plane was the preferred orientation, suggesting that the AZO films possessed a strong c-axis alignment perpendicular to the substrate. With increasing Al dopant concentration, all diffraction peaks exhibited a systematic shift toward higher angles, accompanied by a reduction in crystallinity. This adverse effect, however, was effectively mitigated by extending the purge duration during deposition. Following parameter optimization, the resulting AZO film demonstrated an impressively low resistivity (~ 1.90 × 10<sup>−4</sup> Ω cm), together with significant enhancements of approximately 13% in carrier concentration and 11% in carrier mobility.</p>

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Effects of aluminum content and purge time on optoelectronic properties of ALD AZO films

  • 期刊论文

  • 发表日期：

    2025年12月18日

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  • Yehua Tang,
  • Pengbo Yang,
  • Hao Zhao,
  • Ke-Fan Wang

摘要

Aluminum (Al)-doped zinc oxide (AZO) films were prepared via atomic layer deposition at 250 °C to explore the impact of Al content on their optical, structural, and electrical characteristics. X-ray diffraction patterns indicated that the films crystallized in a hexagonal wurtzite phase exhibiting prominent diffraction peaks corresponding to the (100), (002), and (101) planes. Among these, the (002) plane was the preferred orientation, suggesting that the AZO films possessed a strong c-axis alignment perpendicular to the substrate. With increasing Al dopant concentration, all diffraction peaks exhibited a systematic shift toward higher angles, accompanied by a reduction in crystallinity. This adverse effect, however, was effectively mitigated by extending the purge duration during deposition. Following parameter optimization, the resulting AZO film demonstrated an impressively low resistivity (~ 1.90 × 10−4 Ω cm), together with significant enhancements of approximately 13% in carrier concentration and 11% in carrier mobility.