Scholarlink

<p>As science and technology advances, self-driven and stable electronic/photonic devices capable of working at high temperatures acquire great interest towards manufacturing eco-friendly sustainable devices. In this work, high-temperature performance of a self-powered gallium nitride ultraviolet photodetector (GaN-UVPD) was investigated at different temperatures ranging from room temperature to as high as 350&#xa0;°C under 365&#xa0;nm and 254&#xa0;nm UV light exposures. The self-driven GaN-UVPD revealed an excellent responsivity of 7.50 A/W and a specific detectivity of 1.12 × 10<sup>13</sup>&#xa0;cm.Hz<sup>1/2</sup>.W<sup>−1</sup> (Jones) under 365&#xa0;nm UV light illumination at 200&#xa0;°C without external power. Moreover, the device exhibited a very rapid response to UV light exposure with 17&#xa0;ms rise time and 68&#xa0;ms decay time. Although the GaN-UVPD experiences some performance reduction at high temperatures, it can still operate effectively at 350&#xa0;°C without external power. As a result, it stands out as an excellent candidate for UV communication, space exploration, flame detection, and environmental research, where high responsivity, fast response times, high specific detectivity, and resistance to harsh conditions are crucial.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

High-temperature performance assessment of self-powered gallium nitride ultraviolet sensor

  • 期刊论文

  • 发表日期：

    2025年12月15日

查看全文
  • Kasif Teker

摘要

As science and technology advances, self-driven and stable electronic/photonic devices capable of working at high temperatures acquire great interest towards manufacturing eco-friendly sustainable devices. In this work, high-temperature performance of a self-powered gallium nitride ultraviolet photodetector (GaN-UVPD) was investigated at different temperatures ranging from room temperature to as high as 350 °C under 365 nm and 254 nm UV light exposures. The self-driven GaN-UVPD revealed an excellent responsivity of 7.50 A/W and a specific detectivity of 1.12 × 1013 cm.Hz1/2.W−1 (Jones) under 365 nm UV light illumination at 200 °C without external power. Moreover, the device exhibited a very rapid response to UV light exposure with 17 ms rise time and 68 ms decay time. Although the GaN-UVPD experiences some performance reduction at high temperatures, it can still operate effectively at 350 °C without external power. As a result, it stands out as an excellent candidate for UV communication, space exploration, flame detection, and environmental research, where high responsivity, fast response times, high specific detectivity, and resistance to harsh conditions are crucial.