Scholarlink

<p>In this study, Cu-doped BiFe<sub>0.98-x</sub>Cu<sub>x</sub>Mn<sub>0.02</sub>O<sub>3</sub> (<i>x</i> = 0, 2, 3, 4&#xa0;mol%) thin films were prepared by sol–gel method, and their effects on microstructural and electrical properties were systematically investigated. XRD confirmed that all the samples showed a pure-phase chalcocite structure, and EDS did not detect impurity phases, and combined with SEM, the structural integrity of the doped films was confirmed. XPS showed that the doping of Cu could effectively reduce the oxygen vacancy concentration and decrease the leakage current density, and the best performance was achieved when the doping amount was at <i>x</i> = 0.03&#xa0;mol%, the lattice oxygen ratio was 0.869, the Fe<sup>3</sup>⁺/Fe<sup>2</sup>⁺ ratio was 0.69, and the residual polarisation strength and the coercive field strength were 2Pr = 99 μC/cm<sup>2</sup>, respectively. 2Ec = 537&#xa0;kV/cm, and the leakage current density is 2.33 × 10–5 at an electric field strength of 200&#xa0;kV/cm, and its optical property test exhibits a strong absorption peak near 400&#xa0;nm and an increase in the bandgap value, indicating that the optimisation of the grain boundary density at the appropriate doping level enhances the excitation efficiency of the photogenerated carriers. This provides a strong guarantee to maintain the single-phase multiferroic properties of the material.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effect of Cu doping on the structure and properties of BiFe0.98Mn0.02O3 thin films

  • 期刊论文

  • 发表日期：

    2025年12月25日

查看全文
  • Lingxu Wang,
  • Sen Zhang,
  • Qingyin Pei,
  • Zhen Jiang,
  • Zhenfeng Jing,
  • Shuhui Sun,
  • Haixia Zhang,
  • Xingfu Li,
  • Fengqing Zhang

摘要

In this study, Cu-doped BiFe0.98-xCuxMn0.02O3 (x = 0, 2, 3, 4 mol%) thin films were prepared by sol–gel method, and their effects on microstructural and electrical properties were systematically investigated. XRD confirmed that all the samples showed a pure-phase chalcocite structure, and EDS did not detect impurity phases, and combined with SEM, the structural integrity of the doped films was confirmed. XPS showed that the doping of Cu could effectively reduce the oxygen vacancy concentration and decrease the leakage current density, and the best performance was achieved when the doping amount was at x = 0.03 mol%, the lattice oxygen ratio was 0.869, the Fe3⁺/Fe2⁺ ratio was 0.69, and the residual polarisation strength and the coercive field strength were 2Pr = 99 μC/cm2, respectively. 2Ec = 537 kV/cm, and the leakage current density is 2.33 × 10–5 at an electric field strength of 200 kV/cm, and its optical property test exhibits a strong absorption peak near 400 nm and an increase in the bandgap value, indicating that the optimisation of the grain boundary density at the appropriate doping level enhances the excitation efficiency of the photogenerated carriers. This provides a strong guarantee to maintain the single-phase multiferroic properties of the material.