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<p>Giant dielectric constant materials have become the cornerstone for miniaturization and high performance of electronic components, and have promoted revolutionary development in modern communications, computing, and medical fields. In this study, a dense (Sb<sub>0.5</sub>Dy<sub>0.5</sub>)<sub><i>x</i></sub>Ti<sub>1−<i>x</i></sub>O<sub>2</sub> ceramic material with a strong electron-pinning effect was prepared by a solid-state reaction method. In particular, when <i>x</i> = 0.01, the material exhibits an ultra-high dielectric constant of 1.619 × 10<sup>4</sup> and an ultra-low loss of 0.0102 at 1&#xa0;kHz and RT. The ceramic exhibited excellent frequency stability, temperature stability, and DC bias stability in the frequency range of 10<sup>2</sup>&#xa0;Hz to 10<sup>6</sup>&#xa0;Hz from RT to 250&#xa0;℃. This experiment aims to analyze the mechanism of the material’s excellent dielectric properties by combining X-ray photoelectron spectroscopy (XPS), electron microscopy surface microanalysis, impedance spectroscopy, and relaxation behavior. Experiments show that the defect cluster structure with a strong electron-pinning effect and various polarization behaviors are the main reasons affecting the giant dielectric behavior of ceramics, and based on this research, giant dielectric ceramics with ultra-low loss and excellent temperature, frequency, and DC bias stability can be prepared.</p>

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Colossal dielectric behavior via defect engineering: Sb + Dy co-doping for superior dielectric performance in TiO2 ceramics

  • 期刊论文

  • 发表日期：

    2025年12月13日

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  • Ziming Wang,
  • Yishuo Mi,
  • Jie Xu,
  • Tiantian Yang,
  • Pengyu Sun,
  • Haixiong Huang,
  • Weichun Gao,
  • Jiyan Liang,
  • Jiangtao Fan

摘要

Giant dielectric constant materials have become the cornerstone for miniaturization and high performance of electronic components, and have promoted revolutionary development in modern communications, computing, and medical fields. In this study, a dense (Sb0.5Dy0.5)xTi1−xO2 ceramic material with a strong electron-pinning effect was prepared by a solid-state reaction method. In particular, when x = 0.01, the material exhibits an ultra-high dielectric constant of 1.619 × 104 and an ultra-low loss of 0.0102 at 1 kHz and RT. The ceramic exhibited excellent frequency stability, temperature stability, and DC bias stability in the frequency range of 102 Hz to 106 Hz from RT to 250 ℃. This experiment aims to analyze the mechanism of the material’s excellent dielectric properties by combining X-ray photoelectron spectroscopy (XPS), electron microscopy surface microanalysis, impedance spectroscopy, and relaxation behavior. Experiments show that the defect cluster structure with a strong electron-pinning effect and various polarization behaviors are the main reasons affecting the giant dielectric behavior of ceramics, and based on this research, giant dielectric ceramics with ultra-low loss and excellent temperature, frequency, and DC bias stability can be prepared.