Broadband photo response behaviour of vertically grown ZnO nano rods array architecture
摘要
In the present study, we report UV and visible light photoresponse behavior of hydrothermally grown ZnO nanorods (NRs) array architecture on Si (100) substrate. Field-emission scanning electron micrographs reveal the growth of densely packed hexagonal faceted ZnO NRs array on Si substrate. Grazing incidence X-ray diffraction and Raman scattering analyses confirm the formation of hexagonal wurtzite phase of ZnO. The current–voltage characteristics of ZnO NRs array photodetector show a significant increase in photocurrent with the applied voltage under the UV and visible light illuminations. The transient photoresponse measurements reveal stable and repeatable photocurrent for both UV and visible light illuminations with response and recovery time of about 0.75 and 0.95 s for the applied bias of 3 V. The low-cost and broadband photoresponse of hydrothermally grown ZnO NRs array architecture-based photodetector is the key insight for the fabrication of practical broadband photodetectors.