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<p>This work presents a comparative investigation of two oxide-based heterostructures Bi₂O₃/ZnO/Si and ZnO/Bi₂O₃/Si fabricated via the laser ablation in liquid (LAL) technique to elucidate the role of interface orientation in ultraviolet (UV) photodetection performance. High-purity Bi₂O₃ nanosheets synthesized through the surfactant-free LAL route were integrated with sputtered ZnO films to form clean and well-defined oxide heterointerfaces. Comprehensive structural, morphological, and optical analyses confirmed that both stacking sequences preserve the α-Bi₂O₃ and wurtzite ZnO phases while exhibiting distinct interfacial strain and grain alignment. The ZnO/Bi₂O₃/Si device demonstrated markedly superior photoresponse, achieving a responsivity of 49.8 A·W⁻<sup>1</sup>, detectivity of 9.86 × 10<sup>10</sup> Jones, quantum efficiency of 161.6%, and rise/decay times of 0.0439/0.0323 ms under 385 nm illumination. These enhancements are attributed to a type-II band alignment that facilitates efficient electron–hole separation and rapid carrier transfer across the ZnO/Bi₂O₃ junction, while the inverted Bi₂O₃/ZnO/Si configuration exhibited partial photon attenuation and weaker field-assisted transport. The findings reveal that precise control of interface orientation governs the energy-band coupling, charge-carrier dynamics, and transient response of oxide heterostructures. This study establishes a mechanistic framework for interface-engineered, high-responsivity UV photodetectors and underscores the potential of LAL-derived nanostructures for next-generation optoelectronic applications.</p>

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Interface-driven enhancement of UV photodetection in Bi₂O₃/ZnO/Si and ZnO/Bi₂O₃/Si heterostructures synthesized via laser ablation in liquid

  • 期刊论文

  • 发表日期：

    2025年12月25日

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  • Abdullah Marzouq Alharbi,
  • Naser M. Ahmed

摘要

This work presents a comparative investigation of two oxide-based heterostructures Bi₂O₃/ZnO/Si and ZnO/Bi₂O₃/Si fabricated via the laser ablation in liquid (LAL) technique to elucidate the role of interface orientation in ultraviolet (UV) photodetection performance. High-purity Bi₂O₃ nanosheets synthesized through the surfactant-free LAL route were integrated with sputtered ZnO films to form clean and well-defined oxide heterointerfaces. Comprehensive structural, morphological, and optical analyses confirmed that both stacking sequences preserve the α-Bi₂O₃ and wurtzite ZnO phases while exhibiting distinct interfacial strain and grain alignment. The ZnO/Bi₂O₃/Si device demonstrated markedly superior photoresponse, achieving a responsivity of 49.8 A·W⁻1, detectivity of 9.86 × 1010 Jones, quantum efficiency of 161.6%, and rise/decay times of 0.0439/0.0323 ms under 385 nm illumination. These enhancements are attributed to a type-II band alignment that facilitates efficient electron–hole separation and rapid carrier transfer across the ZnO/Bi₂O₃ junction, while the inverted Bi₂O₃/ZnO/Si configuration exhibited partial photon attenuation and weaker field-assisted transport. The findings reveal that precise control of interface orientation governs the energy-band coupling, charge-carrier dynamics, and transient response of oxide heterostructures. This study establishes a mechanistic framework for interface-engineered, high-responsivity UV photodetectors and underscores the potential of LAL-derived nanostructures for next-generation optoelectronic applications.