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<p>Nickel oxide (NiO) thin films with varying thicknesses (5–100&#xa0;nm) were deposited on fused silica at room temperature via RF magnetron sputtering in pure argon. Optimal deposition conditions were established by analyzing deposition rates under varying pressures (5–25 mTorr) and powers (75–250 W). Structural, optical, and electrical properties were studied using X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV–VIS spectroscopy, and I–V measurements. XRD confirmed a face-centered cubic structure, with a preferred orientation shift from (111) to (200) as thickness increased, and the appearance of the (220) peak beyond 20&#xa0;nm. Crystallite size, microstrain, and dislocation density stabilized for films thicker than 20&#xa0;nm. EDS analysis revealed uniform growth and an increasing Ni:O ratio with thickness, affecting transmittance and resistivity. A slight bandgap increase (3.52 to 3.54&#xa0;eV) and a significant resistivity drop (to 3.0 × 10<sup>–3</sup> Ω m) were observed with increasing thickness, attributed to reduced oxygen concentration and improved film quality.</p>

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Thickness dependence of structural, optical and electrical properties of NiO thin films grown by RF magnetron sputtering

  • 期刊论文

  • 发表日期：

    2025年12月10日

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  • Ümit Doğan,
  • Ahmet Ünverdi,
  • Fahrettin Sarcan,
  • Şule Özdilek,
  • Alican Ökçün,
  • Ayşe Erol

摘要

Nickel oxide (NiO) thin films with varying thicknesses (5–100 nm) were deposited on fused silica at room temperature via RF magnetron sputtering in pure argon. Optimal deposition conditions were established by analyzing deposition rates under varying pressures (5–25 mTorr) and powers (75–250 W). Structural, optical, and electrical properties were studied using X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), UV–VIS spectroscopy, and I–V measurements. XRD confirmed a face-centered cubic structure, with a preferred orientation shift from (111) to (200) as thickness increased, and the appearance of the (220) peak beyond 20 nm. Crystallite size, microstrain, and dislocation density stabilized for films thicker than 20 nm. EDS analysis revealed uniform growth and an increasing Ni:O ratio with thickness, affecting transmittance and resistivity. A slight bandgap increase (3.52 to 3.54 eV) and a significant resistivity drop (to 3.0 × 10–3 Ω m) were observed with increasing thickness, attributed to reduced oxygen concentration and improved film quality.