Scholarlink

<p>This study investigates the effect of sintering temperature on the properties of Mo-doped AZO (MAZO) ceramic targets, fabricated using spark plasma sintering (SPS) at temperatures ranging from 950 to 1350&#xa0;°C. The results show that increasing the sintering temperature improves both the crystallization and density of the MAZO targets. However, sintering temperatures above 1250&#xa0;°C lead to the formation of the ZnAl<sub>2</sub>O<sub>4</sub> phase, which negatively impacts the crystallization and electrical properties. The target sintered at 1150&#xa0;°C exhibited optimal performance, achieving the high density (99.958%) and the low sheet resistance (55 mΩ/□). MAZO films, deposited by RF magnetron sputtering, exhibited excellent optoelectronic properties, with a resistivity of 4.97 × 10<sup>–3</sup> Ω·cm and a transmittance of 83.73%, confirming that the sintering temperature of 1150&#xa0;°C is ideal for both target quality and film performance.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Influence of sintering temperature on the properties of Mo-doped AZO targets

  • 期刊论文

  • 发表日期：

    2025年11月29日

查看全文
  • Zhaoyang Li,
  • Yongwei Wang,
  • Muyu Li

摘要

This study investigates the effect of sintering temperature on the properties of Mo-doped AZO (MAZO) ceramic targets, fabricated using spark plasma sintering (SPS) at temperatures ranging from 950 to 1350 °C. The results show that increasing the sintering temperature improves both the crystallization and density of the MAZO targets. However, sintering temperatures above 1250 °C lead to the formation of the ZnAl2O4 phase, which negatively impacts the crystallization and electrical properties. The target sintered at 1150 °C exhibited optimal performance, achieving the high density (99.958%) and the low sheet resistance (55 mΩ/□). MAZO films, deposited by RF magnetron sputtering, exhibited excellent optoelectronic properties, with a resistivity of 4.97 × 10–3 Ω·cm and a transmittance of 83.73%, confirming that the sintering temperature of 1150 °C is ideal for both target quality and film performance.