Scholarlink

<p>In this study, we report the novel observation of a doping-induced semiconductor-to-metal-like transition and asymmetric magnetoresistance (MR) in Ni-doped MoS<sub>2</sub> nanosheets synthesized via a hydrothermal method. Pure and Ni-doped MoS<sub>2</sub> (Mo<sub>1−<i>x</i></sub>Ni<sub><i>x</i></sub>S<sub>2</sub>; <i>x</i> = 0, 2, 4, 6, and 8%) nanosheets were systematically investigated to elucidate the influence of Ni incorporation on their structural, optical, and transport properties. XRD confirmed a hexagonal phase with progressive peak shifts and disappearance of the (002) plane at higher doping, signifying lattice strain and reduced crystallinity, further supported by Raman analysis. HR-TEM images revealed few-layer nanosheets decorated with Ni quantum dots, validating successful doping and nanosheets morphology. Photoluminescence spectra exhibited A and B excitonic peaks at ~ 797&#xa0;nm and ~ 689&#xa0;nm, respectively, with Ni doping modulating exciton recombination and non-radiative pathways. Hall measurements confirmed <i>n</i>-type conduction in all samples, with carrier mobility and concentration strongly dependent on Ni content. Notably, 8% Ni doping resulted in an exceptionally high mobility (~ 2.13 × 10<sup>3</sup>&#xa0;cm<sup>2</sup>/V&#xa0;s) and enhanced conductivity (6.074 × 10<sup>–3</sup>&#xa0;S/cm), signifying metallic-like transport. The 4% Ni-doped sample exhibited a semiconductor-to-metal-like transition near 220–250&#xa0;K, while magnetic field-dependent R-T measurements showed field-induced suppression of mobility. Moreover, a distinctive asymmetric MR(H) hysteresis (−&#xa0;10.22% vs + 23.36%) revealed the coexistence of orbital and spin-dependent scattering, confirming the influence of localized Ni moments and defect-induced magnetic states on carrier transport. These results establish Ni-doped MoS<sub>2</sub> as a promising platform for exploring spin-charge coupling and tunable quantum transport in layered transition-metal dichalcogenides.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Asymmetric magnetoresistance and enhanced carrier transport in Ni-doped MoS2 nanosheets

  • 期刊论文

  • 发表日期：

    2025年11月26日

查看全文
  • Charudipa D. Kamble,
  • Shilpa D. Kamble,
  • Umesh P. Gawai,
  • Padmakar G. Chavan,
  • Chandrakant T. Birajdar,
  • Sanjay K. Gurav

摘要

In this study, we report the novel observation of a doping-induced semiconductor-to-metal-like transition and asymmetric magnetoresistance (MR) in Ni-doped MoS2 nanosheets synthesized via a hydrothermal method. Pure and Ni-doped MoS2 (Mo1−xNixS2; x = 0, 2, 4, 6, and 8%) nanosheets were systematically investigated to elucidate the influence of Ni incorporation on their structural, optical, and transport properties. XRD confirmed a hexagonal phase with progressive peak shifts and disappearance of the (002) plane at higher doping, signifying lattice strain and reduced crystallinity, further supported by Raman analysis. HR-TEM images revealed few-layer nanosheets decorated with Ni quantum dots, validating successful doping and nanosheets morphology. Photoluminescence spectra exhibited A and B excitonic peaks at ~ 797 nm and ~ 689 nm, respectively, with Ni doping modulating exciton recombination and non-radiative pathways. Hall measurements confirmed n-type conduction in all samples, with carrier mobility and concentration strongly dependent on Ni content. Notably, 8% Ni doping resulted in an exceptionally high mobility (~ 2.13 × 103 cm2/V s) and enhanced conductivity (6.074 × 10–3 S/cm), signifying metallic-like transport. The 4% Ni-doped sample exhibited a semiconductor-to-metal-like transition near 220–250 K, while magnetic field-dependent R-T measurements showed field-induced suppression of mobility. Moreover, a distinctive asymmetric MR(H) hysteresis (− 10.22% vs + 23.36%) revealed the coexistence of orbital and spin-dependent scattering, confirming the influence of localized Ni moments and defect-induced magnetic states on carrier transport. These results establish Ni-doped MoS2 as a promising platform for exploring spin-charge coupling and tunable quantum transport in layered transition-metal dichalcogenides.