<p>A single crystal of 2-aminopyridinium benzoate (2APBA) was grown using the slow evaporation solution technique, yielding a crystal with dimensions of 9 × 7 × 4 mm<sup>3</sup>. The crystal was characterized to assess its potential for nonlinear optical (NLO) applications. It exhibited a wide optical transparency with a lower cut-off wavelength of 353&#xa0;nm and a direct band gap of 3.5&#xa0;eV. The crystal demonstrated a laser damage threshold of 3.94 GW/cm<sup>2</sup> and was thermally stable up to its melting point of 157&#xa0;°C. Mechanical studies classified it as a soft material (<i>n</i> = 4) with a void volume of 2.88%. The Z-scan technique measured a third-order nonlinear susceptibility of <i>χ</i><sup>(3)</sup> = 4.35 × 10<sup>− 8</sup> esu. The combination of a significant third-order nonlinear response, good laser damage threshold, and thermal stability indicates that the 2APBA crystal is a suitable candidate for further investigation in nonlinear device applications.</p>

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Investigation on Hirshfeld surface analysis, Laser-damaged threshold, Mechanical and NLO properties of solution-grown 2-aminopyridinium benzoate crystal

  • A. Senthil,
  • M. Vennila,
  • T. Bharanidharan

摘要

A single crystal of 2-aminopyridinium benzoate (2APBA) was grown using the slow evaporation solution technique, yielding a crystal with dimensions of 9 × 7 × 4 mm3. The crystal was characterized to assess its potential for nonlinear optical (NLO) applications. It exhibited a wide optical transparency with a lower cut-off wavelength of 353 nm and a direct band gap of 3.5 eV. The crystal demonstrated a laser damage threshold of 3.94 GW/cm2 and was thermally stable up to its melting point of 157 °C. Mechanical studies classified it as a soft material (n = 4) with a void volume of 2.88%. The Z-scan technique measured a third-order nonlinear susceptibility of χ(3) = 4.35 × 10− 8 esu. The combination of a significant third-order nonlinear response, good laser damage threshold, and thermal stability indicates that the 2APBA crystal is a suitable candidate for further investigation in nonlinear device applications.