Growth, impedance analysis, and dielectric relaxation of all-inorganic lead-free cesium bismuth chloride (Cs3Bi2Cl9) single crystal for energy storage application
摘要
In this study, high-quality Cs₃Bi₂Cl₉ single crystals with an average length of ~ 4 mm were successfully grown using the slow-cooling technique. The physicochemical, dielectric, and electrical characteristics were systematically examined using standard spectroscopic methods. Impedance spectroscopy was performed in the temperature range of 308–408 K and frequency range of 25 Hz–1 MHz. The impedance analysis revealed a negative temperature coefficient of resistance (NTCR) behavior and Debye-type relaxation with an activation energy of 57.05 ± 1 meV. The dielectric permittivity exhibited strong dependence on both frequency and temperature, decreasing from ~ 10⁶ to ~ 102 due to multiple polarization mechanisms. These results demonstrate the excellent dielectric and electrical performance of Cs₃Bi₂Cl₉ single crystals, suggesting strong potential for optoelectronic and energy storage applications.