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<p>Zinc telluride (ZnTe) thin films were successfully fabricated using the Quasi-Closed Volume (QCV) method, providing stoichiometric and uniform layers suitable for visible-light photodetector applications. XRD and SEM analyses confirmed a cubic ZnTe phase with densely packed grains, while optical studies revealed a direct bandgap of ~ 2.20&#xa0;eV. Electrical measurements indicated p-type conductivity with a resistivity of 1.01 × 10<sup>4</sup> Ω&#xa0;cm and a hole mobility of 0.445 m<sup>2</sup>&#xa0;V<sup>−1</sup>&#xa0;s<sup>−1</sup>. The photodetector exhibited wavelength-dependent behavior, showing maximum sensitivity (465%), responsivity (0.59&#xa0;mA/W), and detectivity (6.9 × 10<sup>6</sup> Jones) under blue light (443&#xa0;nm). The response (26&#xa0;ms) and recovery (13&#xa0;ms) times confirm its rapid photoresponse. The sublinear photocurrent–power relationship (<i>I</i> ∝ <i>P</i><sup>0.62</sup>) indicates trap-controlled conduction dominated by native defects. These findings demonstrate that QCV-grown ZnTe thin films possess stable and reproducible photoresponse characteristics, highlighting their potential for cost-effective, rapid-response visible-light photodetectors.</p>

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Photodetector performance under blue–green–red light in ZnTe thin films grown by the quasi-closed volume method

  • 期刊论文

  • 发表日期：

    2025年11月19日

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摘要

Zinc telluride (ZnTe) thin films were successfully fabricated using the Quasi-Closed Volume (QCV) method, providing stoichiometric and uniform layers suitable for visible-light photodetector applications. XRD and SEM analyses confirmed a cubic ZnTe phase with densely packed grains, while optical studies revealed a direct bandgap of ~ 2.20 eV. Electrical measurements indicated p-type conductivity with a resistivity of 1.01 × 104 Ω cm and a hole mobility of 0.445 m2 V−1 s−1. The photodetector exhibited wavelength-dependent behavior, showing maximum sensitivity (465%), responsivity (0.59 mA/W), and detectivity (6.9 × 106 Jones) under blue light (443 nm). The response (26 ms) and recovery (13 ms) times confirm its rapid photoresponse. The sublinear photocurrent–power relationship (I ∝ P0.62) indicates trap-controlled conduction dominated by native defects. These findings demonstrate that QCV-grown ZnTe thin films possess stable and reproducible photoresponse characteristics, highlighting their potential for cost-effective, rapid-response visible-light photodetectors.