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<p>In the present work, a novel strategy was employed to fabricate&#xa0;a highly responsive metal–insulator–semiconductor (MIS) diodes exhibiting pronounced positive photoresponse by strategically inserting a polycrystalline ZrO₂@Cd interfacial layer between a copper electrode and an n-type silicon substrate. The ZrO₂ thin films doped with varying cadmium concentrations (3, 6, and 9 wt.%) were meticulously deposited onto quartz substrates via the jet nebulizer spray pyrolysis (JNSP) technique at a controlled temperature of 475&#xa0;°C. Structural characterizations revealed that these films crystallized into a stable cubic mono-phase, wherein the crystallite size exhibited a progressive increase while the lattice constants displayed a subtle contraction as Cd incorporation&#xa0;increased. Morphological examinations uncovered an exceptionally uniform texture dominated by well-defined spherical nanoparticles. The deliberate inclusion of Cd ions within the ZrO₂ matrix was found to markedly bolster the optical absorption capabilities and concurrently induce a narrowing of the optical bandgap, reducing it to 3.90&#xa0;eV as ascertained through UV–Vis spectroscopic analysis. Elemental assessments affirmed the compositional integrity of the films, explicitly verifying the presence of Zr, O, and Cd along with their respective oxidation states (Zr<sup>4</sup>⁺, O<sup>2</sup>⁻, and Cd<sup>2</sup>⁺). Detailed electrical analyses of the Cu/ZrO₂@Cd/n-Si MIS Schottky barrier diodes conducted under both illumination and dark conditions demonstrated a substantial reduction in the ideality factor (n), reflecting improved junction quality. Additionally, photodiode metrics, namely photosensitivity (P<sub>S</sub>), photoresponsivity (R), quantum efficiency (QE%) and detectivity (D*), exhibited notable enhancements while increasing Cd concentration. Remarkably, the diode incorporating 9 wt.% Cd emerged as the standout performer, attaining an exceptional detectivity value of 4.76 × 10⁷ (Jones). This study thus puts forward a compelling pathway for engineering next-generation photodetectors with superior optoelectronic properties.</p>

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Investigation of photo-induced charge carrier transport phenomena in Cu/ZrO2@Cd/n-Si MIS Schottky barrier diodes for high-performance optoelectronic applications

  • 期刊论文

  • 发表日期：

    2025年11月16日

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  • P. Gayathri,
  • V. Balasubramani,
  • D. Siva Priya,
  • Talat Ali,
  • Zubair Ahmad,
  • Mohd Shkir

摘要

In the present work, a novel strategy was employed to fabricate a highly responsive metal–insulator–semiconductor (MIS) diodes exhibiting pronounced positive photoresponse by strategically inserting a polycrystalline ZrO₂@Cd interfacial layer between a copper electrode and an n-type silicon substrate. The ZrO₂ thin films doped with varying cadmium concentrations (3, 6, and 9 wt.%) were meticulously deposited onto quartz substrates via the jet nebulizer spray pyrolysis (JNSP) technique at a controlled temperature of 475 °C. Structural characterizations revealed that these films crystallized into a stable cubic mono-phase, wherein the crystallite size exhibited a progressive increase while the lattice constants displayed a subtle contraction as Cd incorporation increased. Morphological examinations uncovered an exceptionally uniform texture dominated by well-defined spherical nanoparticles. The deliberate inclusion of Cd ions within the ZrO₂ matrix was found to markedly bolster the optical absorption capabilities and concurrently induce a narrowing of the optical bandgap, reducing it to 3.90 eV as ascertained through UV–Vis spectroscopic analysis. Elemental assessments affirmed the compositional integrity of the films, explicitly verifying the presence of Zr, O, and Cd along with their respective oxidation states (Zr4⁺, O2⁻, and Cd2⁺). Detailed electrical analyses of the Cu/ZrO₂@Cd/n-Si MIS Schottky barrier diodes conducted under both illumination and dark conditions demonstrated a substantial reduction in the ideality factor (n), reflecting improved junction quality. Additionally, photodiode metrics, namely photosensitivity (PS), photoresponsivity (R), quantum efficiency (QE%) and detectivity (D*), exhibited notable enhancements while increasing Cd concentration. Remarkably, the diode incorporating 9 wt.% Cd emerged as the standout performer, attaining an exceptional detectivity value of 4.76 × 10⁷ (Jones). This study thus puts forward a compelling pathway for engineering next-generation photodetectors with superior optoelectronic properties.