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<p>This research aims to study the growth and doping of Al₀.₁₈Ga₀.₈₂N films with magnesium, using the plasma-assisted partial beam epitaxy (PA-MBE) technique on silicon substrates, to improve the activation of the channels and reduce the specific resistance of the ohmic contact in Nitride membranes. The results showed that careful control of annealing time and temperature leads to high-quality oriented crystal growth and effective doping ratios, with a high etch concentration of (4–5) × 10<sup>19</sup> S⁻<sup>3</sup> and a low specific resistivity of 1.89 × 10⁻<sup>4</sup> Ω cm<sup>2</sup> after annealing. Structural and spectroscopic investigations (RHEED, HRXRD, AFM, PL, and Raman) showed excellent crystal quality and a typical orientation pattern with no yellow emission. In contrast, sharp light emission at 351.5&#xa0;nm was observed, indicating effective doping and low-defect centres. The Hall Effect test results confirmed the significant improvement in the electrical conductivity of positive carriers, while I–V measurements showed that the post-annealing contact exhibited stable ohmic behaviour. These results confirm that the PA-MBE technology is a promising basis for the fabrication of Mg-doped AlGaN films for highly efficient optoelectronic applications.</p>

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High P-type doping control and characterization of AlGaN thin films grown by PA-MBE on silicon substrates

  • 期刊论文

  • 发表日期：

    2025年11月8日

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  • A. Sh. Hussein,
  • Mohammed H. Jawad,
  • Rajaa Obayes Abdulsada,
  • Muqdad S. Abdulla,
  • Sajjad N. Mahdi

摘要

This research aims to study the growth and doping of Al₀.₁₈Ga₀.₈₂N films with magnesium, using the plasma-assisted partial beam epitaxy (PA-MBE) technique on silicon substrates, to improve the activation of the channels and reduce the specific resistance of the ohmic contact in Nitride membranes. The results showed that careful control of annealing time and temperature leads to high-quality oriented crystal growth and effective doping ratios, with a high etch concentration of (4–5) × 1019 S⁻3 and a low specific resistivity of 1.89 × 10⁻4 Ω cm2 after annealing. Structural and spectroscopic investigations (RHEED, HRXRD, AFM, PL, and Raman) showed excellent crystal quality and a typical orientation pattern with no yellow emission. In contrast, sharp light emission at 351.5 nm was observed, indicating effective doping and low-defect centres. The Hall Effect test results confirmed the significant improvement in the electrical conductivity of positive carriers, while I–V measurements showed that the post-annealing contact exhibited stable ohmic behaviour. These results confirm that the PA-MBE technology is a promising basis for the fabrication of Mg-doped AlGaN films for highly efficient optoelectronic applications.