Scholarlink

<p>This study presents a comparative analysis of ultraviolet (UV) photodetectors based on bismuth oxide nanosheets (Bi<sub>2</sub>O<sub>3</sub>-Nsh) and germanium nanowalls (GeNWs), both integrated on ZnO/Si heterojunction substrates and fabricated via pulsed laser ablation in liquid. A ZnO buffer layer was employed to enhance interfacial stability and electrical contact with the silicon platform. Structural, morphological, and optical properties were examined using XRD, FESEM, EDX, and UV–Vis spectroscopy, while device performance under 385&#xa0;nm illumination was assessed through current–voltage analysis. Results reveal that the Bi<sub>2</sub>O<sub>3</sub>-Nsh/ZnO/Si photodetector significantly outperforms its GeNWs-based counterpart, achieving a responsivity of 30.3 A/W, quantum efficiency of 98.6%, sensitivity of 17,200%, gain of 173, detectivity of 6.38 × 10<sup>1</sup>⁰ Jones, and a noise equivalent power of 0.157 × 10⁻<sup>12</sup> W at 6&#xa0;V bias. The superior performance is attributed to favorable band alignment and efficient charge carrier separation at the Bi<sub>2</sub>O<sub>3</sub> interface, highlighting its potential for high-performance UV photodetectors in environmental monitoring, flame detection, and space communication.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Comparative analysis of ultraviolet photodetectors based on bismuth oxide nanosheets and germanium nanowalls: influence of ZnO/Si interface engineering on performance

  • 期刊论文

  • 发表日期：

    2025年11月19日

查看全文
  • Abdullah Marzouq Alharbi,
  • Azhar Abdul Rahman,
  • Dhuha Shaker Hassan,
  • Naser M. Ahmed,
  • Mus’ab S. Alkasasbeh,
  • Nurul Zahirah Noor Azman,
  • Munirah A. Almessiere,
  • Saud Alotaibi

摘要

This study presents a comparative analysis of ultraviolet (UV) photodetectors based on bismuth oxide nanosheets (Bi2O3-Nsh) and germanium nanowalls (GeNWs), both integrated on ZnO/Si heterojunction substrates and fabricated via pulsed laser ablation in liquid. A ZnO buffer layer was employed to enhance interfacial stability and electrical contact with the silicon platform. Structural, morphological, and optical properties were examined using XRD, FESEM, EDX, and UV–Vis spectroscopy, while device performance under 385 nm illumination was assessed through current–voltage analysis. Results reveal that the Bi2O3-Nsh/ZnO/Si photodetector significantly outperforms its GeNWs-based counterpart, achieving a responsivity of 30.3 A/W, quantum efficiency of 98.6%, sensitivity of 17,200%, gain of 173, detectivity of 6.38 × 101⁰ Jones, and a noise equivalent power of 0.157 × 10⁻12 W at 6 V bias. The superior performance is attributed to favorable band alignment and efficient charge carrier separation at the Bi2O3 interface, highlighting its potential for high-performance UV photodetectors in environmental monitoring, flame detection, and space communication.