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<p>The effect of trimethylaluminum (TMA) treatment on the interface characteristics of HfO<sub>2</sub>/Si<sub>0.7</sub>Ge<sub>0.3</sub> metal oxide semiconductor capacitors (MOSCAPs) is investigated in detail. Firstly, compared with Al<sub>2</sub>O<sub>3</sub> treatment, TMA treatment achieves smaller interface trap densities (<i>D</i><sub>it</sub>) and equivalent oxide thickness (EOT) with similar flat band voltage (<i>V</i><sub>fb</sub>) modulation ability. Then, the optimum TMA treatment cycles number for reducing <i>D</i><sub>it</sub> of HfO<sub>2</sub>/Si<sub>0.7</sub>Ge<sub>0.3</sub> MOSCAPs is 3 cycles, which attains a low <i>D</i><sub>it</sub> of 8.2 × 10<sup>11</sup>&#xa0;eV<sup>−1</sup>·cm<sup>−2</sup>. Based on the XPS analysis results, 3 cycles TMA treatment sample achieves the maximum reduction of the peak area ratio of GeO, which can effectively suppress the formation of interface defects. Therefore, it is confirmed that the <i>D</i><sub>it</sub> performance is highly associated with the amount of GeO at HfO<sub>2</sub>/Si<sub>0.7</sub>Ge<sub>0.3</sub> interfaces. Moreover, the increase of <i>D</i><sub>it</sub> with further increasing the cycles number of TMA treatment is caused by more Ge<sup>2+</sup>–O bonds with more Al–O bonds existing in the interface. Therefore, 3 cycles TMA treatment can be a promising passivation candidate for SiGe channel transistors in the advanced technology nodes.</p>

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Effects of trimethylaluminum treatment on the interface properties of HfO2/Si0.7Ge0.3 metal oxide semiconductor capacitors

  • 期刊论文

  • 发表日期：

    2025年11月6日

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  • Yu Zhou,
  • Xiaotong Mao,
  • Kaimin Feng,
  • Haoyan Liu,
  • Jun Luo,
  • Yongliang Li

摘要

The effect of trimethylaluminum (TMA) treatment on the interface characteristics of HfO2/Si0.7Ge0.3 metal oxide semiconductor capacitors (MOSCAPs) is investigated in detail. Firstly, compared with Al2O3 treatment, TMA treatment achieves smaller interface trap densities (Dit) and equivalent oxide thickness (EOT) with similar flat band voltage (Vfb) modulation ability. Then, the optimum TMA treatment cycles number for reducing Dit of HfO2/Si0.7Ge0.3 MOSCAPs is 3 cycles, which attains a low Dit of 8.2 × 1011 eV−1·cm−2. Based on the XPS analysis results, 3 cycles TMA treatment sample achieves the maximum reduction of the peak area ratio of GeO, which can effectively suppress the formation of interface defects. Therefore, it is confirmed that the Dit performance is highly associated with the amount of GeO at HfO2/Si0.7Ge0.3 interfaces. Moreover, the increase of Dit with further increasing the cycles number of TMA treatment is caused by more Ge2+–O bonds with more Al–O bonds existing in the interface. Therefore, 3 cycles TMA treatment can be a promising passivation candidate for SiGe channel transistors in the advanced technology nodes.