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<p>This study investigates the enhancement of silicon solar cell efficiency using a double-passivation technique based on roll-on deposition (ROD) of a silicon oxide mixed with phosphoric acid (SiO₂:H₃PO₄) layer. Conventional passivation materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and silicon nitride (Si₃N₄) are widely used to reduce surface recombination and improve carrier lifetimes. However, conventional deposition methods like Plasma Enhanced Chemical Vapor Deposition (PECVD) are costly, complex, and use toxic gasses. The ROD method, a sol–gel-based approach using tetraethyl orthosilicate (TEOS) as a precursor, offers a more resource efficient and scalable alternative. This research integrates non-toxic thermal oxidation with a ROD-applied SiO₂:H₃PO₄ layer to create a dual-passivation structure on p-type silicon wafers. The SiO₂ layer acts as an initial passivation barrier, while the SiO₂:H₃PO₄ layer enhances surface passivation and light trapping. This study investigates the effect of different concentrations (20%, 30%, and 40%) of H₃PO₄ in SiO₂:H₃PO₄ solutions on the passivation quality and photovoltaic performance of silicon solar cells. The results are compared across cells using phosphorus oxytrichloride (POCl₃) and H₃PO₄-based emitter formation techniques. Experimental results show the significant improvements in morphological structures, optical and electrical properties, including open-circuit voltage (V<sub>oc</sub>), short-circuit current density (J<sub>sc</sub>), and overall efficiency. The best-performing samples, POCl₃ and H₃PO₄ emitters with a 40% H₃PO₄ concentration in SiO₂:H₃PO₄ solutions, achieved efficiencies of 10.94% (sample C with the incorporation 40% H₃PO₄ concentration in SiO₂:H₃PO₄ solutions and 14.1% (sample F the incorporation of 40% H₃PO₄ concentration in SiO₂:H₃PO₄ solutions), respectively. These findings highlight the potential of the ROD technique as a viable alternative to conventional passivation methods, maintaining high-efficiency while enhancing process scalability.</p>

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Photo-electrical performance enhancement of silicon solar cell via In-situ double passivation using roll-On deposited silicon dioxide with phosphoric acid

  • 期刊论文

  • 发表日期：

    2025年11月7日

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  • Muhd Hatim Rohaizar,
  • Suhaila Sepeai,
  • Ahmad Rujhan Mohd Rais,
  • Mohd Adib Ibrahim,
  • Norasikin Ahmad Ludin

摘要

This study investigates the enhancement of silicon solar cell efficiency using a double-passivation technique based on roll-on deposition (ROD) of a silicon oxide mixed with phosphoric acid (SiO₂:H₃PO₄) layer. Conventional passivation materials such as silicon dioxide (SiO₂), aluminum oxide (Al₂O₃), and silicon nitride (Si₃N₄) are widely used to reduce surface recombination and improve carrier lifetimes. However, conventional deposition methods like Plasma Enhanced Chemical Vapor Deposition (PECVD) are costly, complex, and use toxic gasses. The ROD method, a sol–gel-based approach using tetraethyl orthosilicate (TEOS) as a precursor, offers a more resource efficient and scalable alternative. This research integrates non-toxic thermal oxidation with a ROD-applied SiO₂:H₃PO₄ layer to create a dual-passivation structure on p-type silicon wafers. The SiO₂ layer acts as an initial passivation barrier, while the SiO₂:H₃PO₄ layer enhances surface passivation and light trapping. This study investigates the effect of different concentrations (20%, 30%, and 40%) of H₃PO₄ in SiO₂:H₃PO₄ solutions on the passivation quality and photovoltaic performance of silicon solar cells. The results are compared across cells using phosphorus oxytrichloride (POCl₃) and H₃PO₄-based emitter formation techniques. Experimental results show the significant improvements in morphological structures, optical and electrical properties, including open-circuit voltage (Voc), short-circuit current density (Jsc), and overall efficiency. The best-performing samples, POCl₃ and H₃PO₄ emitters with a 40% H₃PO₄ concentration in SiO₂:H₃PO₄ solutions, achieved efficiencies of 10.94% (sample C with the incorporation 40% H₃PO₄ concentration in SiO₂:H₃PO₄ solutions and 14.1% (sample F the incorporation of 40% H₃PO₄ concentration in SiO₂:H₃PO₄ solutions), respectively. These findings highlight the potential of the ROD technique as a viable alternative to conventional passivation methods, maintaining high-efficiency while enhancing process scalability.