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<p>In electromagnetic compatibility, conventional anti-interference strategies are inadequate for advancing contemporary microwave integrated circuits. Thus, there is a need to design materials that facilitate integration, simplify preparation, and enhance high-frequency performance. This work reports the synthesis of a CoFe-TiO<sub>2</sub> film using gradient co-sputtering of TiO<sub>2</sub> and CoFe. The composite film, produced by modifying the sputtering angle of the TiO<sub>2</sub> target, exhibits a resistivity of up to 1465 μΩ·cm and demonstrates an eddy current loss suppression capability six times greater than that of the pure CoFe film. The composite film exhibits a significant <i>H</i><sub><i>k</i></sub>, with a ferromagnetic resonance frequency of 5.1&#xa0;GHz at zero field. This phenomenon is primarily ascribed to the internal stress within the film, resulting from the gradient sputtering of TiO<sub>2</sub>, which induces a larger uniaxial anisotropy. CoFe-TiO<sub>2</sub> films fabricated using gradient sputtering exhibit significant potential for a high-frequency noise suppressor.</p>

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Preparation and magnetic properties of CoFe-TiO2 composite films by composition gradient co-sputtering for high-frequency noise suppressor

  • 期刊论文

  • 发表日期：

    2025年11月8日

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  • Runjie Yang,
  • Yan Zhang,
  • Jiaxing Liu,
  • Min Chen,
  • Bo Dai,
  • Yong Ren

摘要

In electromagnetic compatibility, conventional anti-interference strategies are inadequate for advancing contemporary microwave integrated circuits. Thus, there is a need to design materials that facilitate integration, simplify preparation, and enhance high-frequency performance. This work reports the synthesis of a CoFe-TiO2 film using gradient co-sputtering of TiO2 and CoFe. The composite film, produced by modifying the sputtering angle of the TiO2 target, exhibits a resistivity of up to 1465 μΩ·cm and demonstrates an eddy current loss suppression capability six times greater than that of the pure CoFe film. The composite film exhibits a significant Hk, with a ferromagnetic resonance frequency of 5.1 GHz at zero field. This phenomenon is primarily ascribed to the internal stress within the film, resulting from the gradient sputtering of TiO2, which induces a larger uniaxial anisotropy. CoFe-TiO2 films fabricated using gradient sputtering exhibit significant potential for a high-frequency noise suppressor.