Structural, surface morphological-topological, temperature-frequency-dependent capacitive characteristics of rare earth-doped metal oxide-based material (Pb1−xBi0.5xNd0.5x)(FexTi1−x)O3 for electronic device application
摘要
In order to distinguish as a competitive capacitive component by delineating the structural feature, surface morphology, grain distribution topography, temperature-frequency-dependent electrical properties, rare earth (neodymium)-doped lead titanate-bismuth ferrite materials [(Pb1−xBi0.5xNd0.5x)(FexTi1−x)O3: x = 0.3, 0.5] have been fabricated with the help of an inventive solid-state mixed oxide-based step-sintering technique. The X-Ray diffraction analysis clarifies the materials’ structures change from tetragonal to rhombohedral as the quantity of rare earth elements increases. The polycrystalline grains with average diameter (0.2 μm − 5.14 μm), uniformly aligned grain texture, modest isotropy (23%–43%), and orientations from polar histogram are observed through SEM topography. Complex impedance spectroscopy has been engaged to disclose the resistance (on account of grain boundaries), semiconducting nature (due to short-range charge carrier hopping), multiple conduction processes with the aid of Arrhenius equation, electric modulus spectrum (tends towards zero as charge flow is restricted under steady electric field) and frequency-dependent relaxation. The material with low Nd concentration is proven to be a suitable component for advanced device applications with the help of experimentally investigated high-frequency dispersion dielectric permittivity and low dielectric loss at high frequency implying minimal energy dissipation (good choice for uses).