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<p>Ferroelectric materials usually reveal a distinctive and valuable response to magnetic as well as electric fields as a result of their spontaneous polarization that favors them for captivating and innovative electronic device applications. Nevertheless, several inevitable downsides like toxicity, limited frequency–temperature-dependent sensitivity, as well as hysteresis prohibit their usage. Therefore, the research aspiration is to explore and develop a novel lead-free mixed oxide-based ferroelectric material [X(Y'<sub>2/3</sub>Y''<sub>1/3</sub>)O<sub>3</sub>; (X = Fe, iron, Y' = Ni, nickel and Y'' = Ta, tantalum)]. The material’s characterizations in relation to strain, dislocation density, crystallite size, and crystal structure identification have been clarified through X-ray diffraction (XRD) and W–H technique analysis. The polycrystalline grains with varied size, distinct grain borders, grain texture, anisotropy, orientations from polar histogram, and individual concentrations are observed through SEM topography and EDAX analysis. The processed Fe(Ni<sub>2/3</sub>Ta<sub>1/3</sub>)O<sub>3</sub> material has been proven to be a suitable device component with the help of the temperature–frequency-dependent experimentally investigated dielectric permittivity, loss, impedance, electric modulus with relaxation behavior, conductivity, capacitive characteristics, and FTIR spectrum. The developed sensor component has a promising future in electronics because of its improved sensitivity, stability, affordability, and ease of manufacturing.</p>

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Structural, morphological, topological, and electrical properties study of oxide-based Fe(Ni2/3Ta1/3)O3 ceramic material for electronic device

  • 期刊论文

  • 发表日期：

    2025年10月26日

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  • Jagadish Chandra Padhi,
  • Seshadev Sahoo,
  • Satyanarayan Bhuyan

摘要

Ferroelectric materials usually reveal a distinctive and valuable response to magnetic as well as electric fields as a result of their spontaneous polarization that favors them for captivating and innovative electronic device applications. Nevertheless, several inevitable downsides like toxicity, limited frequency–temperature-dependent sensitivity, as well as hysteresis prohibit their usage. Therefore, the research aspiration is to explore and develop a novel lead-free mixed oxide-based ferroelectric material [X(Y'2/3Y''1/3)O3; (X = Fe, iron, Y' = Ni, nickel and Y'' = Ta, tantalum)]. The material’s characterizations in relation to strain, dislocation density, crystallite size, and crystal structure identification have been clarified through X-ray diffraction (XRD) and W–H technique analysis. The polycrystalline grains with varied size, distinct grain borders, grain texture, anisotropy, orientations from polar histogram, and individual concentrations are observed through SEM topography and EDAX analysis. The processed Fe(Ni2/3Ta1/3)O3 material has been proven to be a suitable device component with the help of the temperature–frequency-dependent experimentally investigated dielectric permittivity, loss, impedance, electric modulus with relaxation behavior, conductivity, capacitive characteristics, and FTIR spectrum. The developed sensor component has a promising future in electronics because of its improved sensitivity, stability, affordability, and ease of manufacturing.