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<p>In this study, the relationship between barrier heights and ideality factors was investigated using current–voltage (<i>I–V</i>) measurements of Al/methylene blue (MB)/p-Si semiconductor structures prepared by homogeneously coating the top layer of <i>p</i>-Si semiconductor structures with methylene blue solution by spin coating method. A total of 49 Al/MB/p-Si semiconductor structures (49 dots) were fabricated, but only 32 of them exhibited a homogeneous and stable structure. Thus, the barrier heights (Φ<sub>bo</sub>) and ideality factors values (<i>n</i>) of the Al/MB/p-Si semiconductor structures varied between 0.711 and 0.770&#xa0;eV and 2.372 and 3.255, respectively. It was seen that the barrier height (Φ<sub>bo</sub>) and ideality factor (<i>n</i>) values changed for each diode. The lateral homogeneous barrier height value was found to be 0.793&#xa0;eV from the experimental linear relationship between the barrier heights and ideality factors of the Al/MB/<i>p</i>-Si structures. The distribution of experimental barrier height and ideality factor values obtained using the Gaussian function was calculated as an average barrier height value of 0.7445&#xa0;eV with a standard deviation of 14&#xa0;meV and an average ideality factor value of 2.811 with a standard deviation of 220&#xa0;meV, respectively.</p>

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Linear correlation between ideality factors and barrier heights in identically prepared of Al/methylene blue/p-Si structures

  • 期刊论文

  • 发表日期：

    2025年10月23日

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  • Halil Özerli,
  • Niyazi Berk,
  • Şükrü Karataş

摘要

In this study, the relationship between barrier heights and ideality factors was investigated using current–voltage (I–V) measurements of Al/methylene blue (MB)/p-Si semiconductor structures prepared by homogeneously coating the top layer of p-Si semiconductor structures with methylene blue solution by spin coating method. A total of 49 Al/MB/p-Si semiconductor structures (49 dots) were fabricated, but only 32 of them exhibited a homogeneous and stable structure. Thus, the barrier heights (Φbo) and ideality factors values (n) of the Al/MB/p-Si semiconductor structures varied between 0.711 and 0.770 eV and 2.372 and 3.255, respectively. It was seen that the barrier height (Φbo) and ideality factor (n) values changed for each diode. The lateral homogeneous barrier height value was found to be 0.793 eV from the experimental linear relationship between the barrier heights and ideality factors of the Al/MB/p-Si structures. The distribution of experimental barrier height and ideality factor values obtained using the Gaussian function was calculated as an average barrier height value of 0.7445 eV with a standard deviation of 14 meV and an average ideality factor value of 2.811 with a standard deviation of 220 meV, respectively.