Scholarlink

<p>This work investigates the potential of CsPbBr₃ and ZnO-doped CsPbBr₃ thin films as multifunctional layers for improving silicon solar cell performance through simultaneous surface passivation and antireflection effects. Thin films were synthesized via a solution-based method and characterized using AFM, photoluminescence (PL), reflectivity, and carrier lifetime measurements. The incorporation of ZnO into CsPbBr₃ increased nanoparticle size (from 64 to 98 nm) and surface roughness (from 31 to 54 nm), leading to enhanced light scattering and a significant reduction in reflectivity, from 27% for bare Si to 3% for ZnO:CsPbBr₃/Si. PL intensity was notably higher for the doped film, indicating suppressed non-radiative recombination. Time-resolved photoluminescence measurements further confirmed this, showing a prolonged carrier lifetime from 2 µs (Si) to 32 µs (ZnO:CsPbBr₃/Si), evidencing effective surface passivation. These findings demonstrate the synergistic role of ZnO doping in enhancing both optical and electronic properties of CsPbBr₃ layers, offering a promising strategy for next-generation silicon photovoltaics.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Tuning surface roughness and carrier dynamics using ZnO-doped CsPbBr3 for enhanced efficiency in silicon photovoltaics

  • 期刊论文

  • 发表日期：

    2025年10月24日

查看全文
  • Moez Salem,
  • Amel Haouas,
  • Noura khemiri,
  • Oussama Amor,
  • Abdullah Almohammedi,
  • Fredj Hassen

摘要

This work investigates the potential of CsPbBr₃ and ZnO-doped CsPbBr₃ thin films as multifunctional layers for improving silicon solar cell performance through simultaneous surface passivation and antireflection effects. Thin films were synthesized via a solution-based method and characterized using AFM, photoluminescence (PL), reflectivity, and carrier lifetime measurements. The incorporation of ZnO into CsPbBr₃ increased nanoparticle size (from 64 to 98 nm) and surface roughness (from 31 to 54 nm), leading to enhanced light scattering and a significant reduction in reflectivity, from 27% for bare Si to 3% for ZnO:CsPbBr₃/Si. PL intensity was notably higher for the doped film, indicating suppressed non-radiative recombination. Time-resolved photoluminescence measurements further confirmed this, showing a prolonged carrier lifetime from 2 µs (Si) to 32 µs (ZnO:CsPbBr₃/Si), evidencing effective surface passivation. These findings demonstrate the synergistic role of ZnO doping in enhancing both optical and electronic properties of CsPbBr₃ layers, offering a promising strategy for next-generation silicon photovoltaics.