<p>Developing new electronic ceramics materials is encouraging for the persistently increasing demand in futuristic electronic products. Using a cost-effective solid-state reaction method, we have developed and characterized a novel complex system, namely sodium titanium tungstate. The preliminary structural analysis suggests the existence of multiphase in the new system. Williamson-Hall plot analysis indicates that the mean crystallite size is 95&#xa0;nm, with a lattice strain of 4.1 × 10<sup>–4</sup> in the developed system. The derived electrical parameters (from capacitive, resistive, and conductive measurements) were obtained in a working frequency of 1&#xa0;kHz to 1&#xa0;MHz with a variable temperature range from 298 to 753&#xa0;K, establishing the Maxwell–Wagner dispersion phenomena of dielectric, relaxation, and transport mechanisms. The temperature coefficient of resistance (TCR) is within the range of −&#xa0;0.004 to −&#xa0;0.028, and the thermistor constant (β) is found to be 4800 to 800 in a variable working temperature domain.</p>

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Studies of the electrical and optical properties of sodium titanium tungstate ceramic for suitable electronic applications

  • S. B. Bhoobash,
  • M. Suman Kalyan,
  • C. Behera

摘要

Developing new electronic ceramics materials is encouraging for the persistently increasing demand in futuristic electronic products. Using a cost-effective solid-state reaction method, we have developed and characterized a novel complex system, namely sodium titanium tungstate. The preliminary structural analysis suggests the existence of multiphase in the new system. Williamson-Hall plot analysis indicates that the mean crystallite size is 95 nm, with a lattice strain of 4.1 × 10–4 in the developed system. The derived electrical parameters (from capacitive, resistive, and conductive measurements) were obtained in a working frequency of 1 kHz to 1 MHz with a variable temperature range from 298 to 753 K, establishing the Maxwell–Wagner dispersion phenomena of dielectric, relaxation, and transport mechanisms. The temperature coefficient of resistance (TCR) is within the range of − 0.004 to − 0.028, and the thermistor constant (β) is found to be 4800 to 800 in a variable working temperature domain.