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<p>Metal–organic chemical vapor deposition technology was utilized to grow the N-polar n-type Al<sub>0.58</sub>Ga<sub>0.42</sub>N epitaxial layers with SiN<sub>x</sub> interlayers on <i>c</i>-plane sapphire substrates. Energy-dispersive X-ray spectroscopy (EDS) and scanning electron microscopy (SEM) were used to validate the insertion of the ultra-thin SiN<sub>x</sub> interlayer. High-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM), and Hall effect measurements were employed to evaluate the impacts of the inserted SiN<sub>x</sub> layers grown with various growth time on structural and electrical properties of the N-polar n-AlGaN epitaxial layers. It was revealed from the characterization results that the SiN<sub>x</sub> interlayer grown with an optimized growth time played a critical role in enhancing the crystalline quality, improving surface smoothness, and achieving superior electrical properties for the n-AlGaN layer. In fact, the root-mean-square value of the N-polar n-AlGaN epitaxial layer with the SiN<sub>x</sub> interlayer grown for 3&#xa0;min was reduced by 32.3% as compared to its counterpart without SiN<sub>x</sub> interlayer. Concurrently, the carrier concentration was increased by a factor of 7.13, rising significantly from 1.16 × 10<sup>18</sup> cm⁻<sup>3</sup> for the sample grown without SiN<sub>x</sub> interlayer to 8.27 × 10<sup>18</sup> cm⁻<sup>3</sup> for the sample grown with an optimized SiN<sub>x</sub> interlayer. These improvements can be attributed to the SiN<sub>x</sub> interlayer which acts as a patterned template, facilitating the ordered growth of subsequent AlGaN epitaxial layer and the annihilation of the dislocations.</p>

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Enhanced structural and electrical characteristics of N-polar n-Al0.58Ga0.42N epitaxial layers grown with SiNx interlayer

  • 期刊论文

  • 发表日期：

    2025年10月16日

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  • Xingyue Huang,
  • Xiong Zhang,
  • Xuguang Luo,
  • Ruiting Fang,
  • Liang Li,
  • Zhifeng Yang,
  • Xiaoting Shen,
  • Shijie Chen,
  • Xinwei Li,
  • Zihao Zhao

摘要

Metal–organic chemical vapor deposition technology was utilized to grow the N-polar n-type Al0.58Ga0.42N epitaxial layers with SiNx interlayers on c-plane sapphire substrates. Energy-dispersive X-ray spectroscopy (EDS) and scanning electron microscopy (SEM) were used to validate the insertion of the ultra-thin SiNx interlayer. High-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM), and Hall effect measurements were employed to evaluate the impacts of the inserted SiNx layers grown with various growth time on structural and electrical properties of the N-polar n-AlGaN epitaxial layers. It was revealed from the characterization results that the SiNx interlayer grown with an optimized growth time played a critical role in enhancing the crystalline quality, improving surface smoothness, and achieving superior electrical properties for the n-AlGaN layer. In fact, the root-mean-square value of the N-polar n-AlGaN epitaxial layer with the SiNx interlayer grown for 3 min was reduced by 32.3% as compared to its counterpart without SiNx interlayer. Concurrently, the carrier concentration was increased by a factor of 7.13, rising significantly from 1.16 × 1018 cm⁻3 for the sample grown without SiNx interlayer to 8.27 × 1018 cm⁻3 for the sample grown with an optimized SiNx interlayer. These improvements can be attributed to the SiNx interlayer which acts as a patterned template, facilitating the ordered growth of subsequent AlGaN epitaxial layer and the annihilation of the dislocations.