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<p>In this study, Hf<sup>4+</sup>-doped BiFe<sub>1−<i>x</i></sub>Hf<sub><i>x</i></sub>O<sub>3</sub> (<i>x</i> = 0–1.5&#xa0;mol%) thin films were synthesized via the sol–gel method, and the effects of Hf doping on the structural and electrical properties were systematically investigated. The results reveal that 1.2-mol% Hf incorporation induces lattice distortion and grain refinement, significantly suppressing the formation of oxygen vacancies. Consequently, the Fe<sup>3+</sup>/Fe<sup>2+</sup> ratio increases to 2.03, and the relative concentration of oxygen vacancies decreases to 0.14. Under an applied electric field of 100&#xa0;kV/cm, the leakage current density is reduced to 2.98 × 10<sup>–6</sup> A/cm<sup>2</sup>, while the remanent polarization reaches 93.92 μC/cm<sup>2</sup>. The dielectric constant is enhanced to 171, showing stable frequency dependence. Aging tests indicate a low polarization degradation rate of only 10.5%, and the optical band gap is widened to 2.60&#xa0;eV. These results demonstrate that Hf<sup>4+</sup> doping synergistically improves the overall performance of BiFeO<sub>3</sub> thin films through defect suppression and lattice regulation. This work clarifies the mechanism by which Hf<sup>4+</sup> doping enhances the ferroelectric properties of BiFeO<sub>3</sub> films by inhibiting oxygen vacancy formation and optimizing the lattice structure, thereby providing a solid experimental foundation for the development of low-leakage, high-stability ferroelectric memory devices.</p>

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Study of the regulatory mechanism of Hf4+ doping on the structural evolution and ferroelectric properties of BiFeO3 thin films

  • 期刊论文

  • 发表日期：

    2025年10月19日

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  • Shuhui Sun,
  • Qingyin Pei,
  • Guangwei Zheng,
  • Haixia Zhang,
  • Zhenfeng Jing,
  • Sen Zhang,
  • Xingfu Li,
  • Qingbo Tian,
  • Fengqing Zhang

摘要

In this study, Hf4+-doped BiFe1−xHfxO3 (x = 0–1.5 mol%) thin films were synthesized via the sol–gel method, and the effects of Hf doping on the structural and electrical properties were systematically investigated. The results reveal that 1.2-mol% Hf incorporation induces lattice distortion and grain refinement, significantly suppressing the formation of oxygen vacancies. Consequently, the Fe3+/Fe2+ ratio increases to 2.03, and the relative concentration of oxygen vacancies decreases to 0.14. Under an applied electric field of 100 kV/cm, the leakage current density is reduced to 2.98 × 10–6 A/cm2, while the remanent polarization reaches 93.92 μC/cm2. The dielectric constant is enhanced to 171, showing stable frequency dependence. Aging tests indicate a low polarization degradation rate of only 10.5%, and the optical band gap is widened to 2.60 eV. These results demonstrate that Hf4+ doping synergistically improves the overall performance of BiFeO3 thin films through defect suppression and lattice regulation. This work clarifies the mechanism by which Hf4+ doping enhances the ferroelectric properties of BiFeO3 films by inhibiting oxygen vacancy formation and optimizing the lattice structure, thereby providing a solid experimental foundation for the development of low-leakage, high-stability ferroelectric memory devices.