Investigation of the electronic structural and optical properties of CN2H5HgI3 single crystal
摘要
The single crystal of CN2H5HgI3 was grown at room temperature using a solution method. Utilizing first-principles density functional theory, the electronic structure and optical properties of CN2H5HgI3 crystals were investigated through the generalized gradient approximation (GGA + U) approach. The single crystal analysis results indicate that CN2H5HgI3 exhibits a triclinic structure with a space group of P-1. CN2H5HgI3 is identified as a direct band-gap semiconductor with a band gap of 3.07 eV, making it suitable for applications in ultraviolet detection materials. The energy levels of the electrons at the top of the valence band and the bottom of the conduction band are primarily derived from Hg, I, C, N, and H. CN2H5HgI3 is formed through electrostatic interactions between CN2H5+ and [HgI3]−. By combining the density of states, dielectric constant, and absorption coefficient, the characteristics of electron transitions were discussed. The results obtained from the UV–Vis-NIR spectra indicate that the band gap of the CN2H5HgI3 crystal is 2.59 eV, which is lower than the calculated band gap of 3.07 eV. Theoretical calculation was verified via fluorescence spectroscopy, which showed that CN2H5HgI3 exhibits a pronounced exciton luminescence effect at room temperature, with a first exciton binding energy of 480 meV. This is significantly higher than the exciton binding energies of similar compounds CH3NH3HgI3 (166 meV) and (CH3NH3)2HgI4 (256 meV). Our analysis of the electronic structure and energy band of the crystal suggests that CN2H5HgI3 has potential applications as an ultraviolet detector material and exciton luminescent material.