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<p>This paper discusses the impact of the density of interface states (<i>D</i><sub>it</sub>) on the current conduction of β-Ga<sub>2</sub>O<sub>3</sub> thin films grown on 4H-SiC substrate at three different O<sub>2</sub> partial pressures (0.1 mTorr, 0.5 mTorr, 1 mTorr) by the pulsed laser deposition technique. Thin film grown at 0.1 mTorr shows good quality of thin film compared to the film grown at 0.5 mTorr and 1 mTorr from analysing the XRD and AFM results. As thin film quality declines with increasing O<sub>2</sub> partial pressure. UV–visible spectroscopy observed the optical bandgap is declining from 4.48 to 4.04&#xa0;eV with increasing growth pressure. Current–Voltage characteristics also show the decrement in current density with an increase in O<sub>2</sub> partial pressure. However, the estimated Schottky barrier height and donor concentration calculated from capacitance–voltage measurement show the contradiction with current density. As Schottky barrier height decreases and donor concentration increases with O<sub>2</sub> partial pressure. Therefore, the density of interface (<i>D</i><sub>it</sub>) of all three samples was calculated from the high-low frequency method showing the increment in density of interface states with an increase in O<sub>2</sub> partial pressure. These interface states can trap the charge carrier. This suggests that despite high Schottky barrier height and lower donor concentration, thin film grown at 0.1 mTorr shows a high current density.</p>

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Synthesis and characterization of pulsed laser deposited β-Ga2O3 thin films

  • 期刊论文

  • 发表日期：

    2025年10月6日

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  • Pooja Pal,
  • Akhilesh Pandey,
  • Shankar Dutta,
  • Sunil Kumar,
  • Sushil Kumar Singh

摘要

This paper discusses the impact of the density of interface states (Dit) on the current conduction of β-Ga2O3 thin films grown on 4H-SiC substrate at three different O2 partial pressures (0.1 mTorr, 0.5 mTorr, 1 mTorr) by the pulsed laser deposition technique. Thin film grown at 0.1 mTorr shows good quality of thin film compared to the film grown at 0.5 mTorr and 1 mTorr from analysing the XRD and AFM results. As thin film quality declines with increasing O2 partial pressure. UV–visible spectroscopy observed the optical bandgap is declining from 4.48 to 4.04 eV with increasing growth pressure. Current–Voltage characteristics also show the decrement in current density with an increase in O2 partial pressure. However, the estimated Schottky barrier height and donor concentration calculated from capacitance–voltage measurement show the contradiction with current density. As Schottky barrier height decreases and donor concentration increases with O2 partial pressure. Therefore, the density of interface (Dit) of all three samples was calculated from the high-low frequency method showing the increment in density of interface states with an increase in O2 partial pressure. These interface states can trap the charge carrier. This suggests that despite high Schottky barrier height and lower donor concentration, thin film grown at 0.1 mTorr shows a high current density.