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<p>This study explores the impact of cobalt (Co<sup>2</sup>⁺) and nickel (Ni<sup>2</sup>⁺) doping on the structural, optical, and electrical properties of ZnS thin films synthesized via the SILAR technique. X-ray diffraction (XRD) confirmed a cubic polycrystalline structure with lattice distortion more pronounced in Co-doped films due to ionic radius differences. SEM and EDX analyses showed uniform elemental distribution and improved grain growth with increasing dopant content. Optical measurements revealed a tunable band gap, decreasing from 3.73&#xa0;eV (undoped) to 3.51&#xa0;eV (6% Co) and 3.54&#xa0;eV (6% Ni), accompanied by reduced transmittance. While both dopants influenced the optical behavior, cobalt doping resulted in more significant changes. Electrical measurements performed on Co-doped samples revealed enhanced conductivity and carrier mobility, attributed to donor-like states near the conduction band minimum. These results position Co-doped ZnS as a promising material for optoelectronic and photovoltaic applications, with doping levels up to 6% offering optimal performance without compromising structural integrity.</p>

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Impact of transition metal doping on the optical and electrical properties of zinc sulfide: advancing photovoltaic performance

  • 期刊论文

  • 发表日期：

    2025年10月10日

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  • A. Yousfi,
  • M. El Bouji,
  • Y. Nejmi,
  • Y. Ait-Alla,
  • H. El Farri,
  • N. Ait Labyad,
  • I. Benaicha,
  • A. El-Habib,
  • A. Fahmi,
  • A. Raidou,
  • S. Amraoui,
  • K. Nouneh,
  • M. Taibi,
  • M. Fahoume

摘要

This study explores the impact of cobalt (Co2⁺) and nickel (Ni2⁺) doping on the structural, optical, and electrical properties of ZnS thin films synthesized via the SILAR technique. X-ray diffraction (XRD) confirmed a cubic polycrystalline structure with lattice distortion more pronounced in Co-doped films due to ionic radius differences. SEM and EDX analyses showed uniform elemental distribution and improved grain growth with increasing dopant content. Optical measurements revealed a tunable band gap, decreasing from 3.73 eV (undoped) to 3.51 eV (6% Co) and 3.54 eV (6% Ni), accompanied by reduced transmittance. While both dopants influenced the optical behavior, cobalt doping resulted in more significant changes. Electrical measurements performed on Co-doped samples revealed enhanced conductivity and carrier mobility, attributed to donor-like states near the conduction band minimum. These results position Co-doped ZnS as a promising material for optoelectronic and photovoltaic applications, with doping levels up to 6% offering optimal performance without compromising structural integrity.