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<p>Immense potential has been demonstrated by photodetectors based on two-dimensional (2D) van der Waals heterostructures (vdWHs), positioning them as a transformative technology for numerous applications in modern nanotechnology. However, 2D vdWHs photodetectors based on photoconductive effects require an external power input and are often accompanied by a large dark current, which hinders the development of miniaturization and portability of devices and greatly limits the application of devices in complex environments. In this paper, a type-Ι self-powered polarization-sensitive photodetector based on ReSe<sub>2</sub>/PtS<sub>2</sub> van der Waals heterojunction is constructed, which has excellent photovoltaic characteristics. The type-I band alignment facilitates the collection of photogenerated holes from the ReSe<sub>2</sub> layer by the PtS<sub>2</sub> layer, thereby inhibiting carrier recombination. Enabled by the strong built-in electric field, a self-powered photoresponse with a wide spectrum from 365 to 1064&#xa0;nm is realized. At zero bias voltage, the device achieves a high detectivity of 1.96 × 10<sup>11</sup> Jones and a high light on/off ratio of over 10<sup>4</sup> under the irradiation of 685&#xa0;nm light. It also has a fast response speed of 4/4&#xa0;ms and the photocurrent anisotropy ratio reaches 1.2 at 638&#xa0;nm light. In addition, we verified the device’s polarization imaging capability. This work paves the way for the development of high-performance type-Ι photodetectors with self-powered polarization-sensitive light detection and polarization imaging capabilities.</p>

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Type‑I heterostructure based on ReSe2/PtS2 for self-powered and broadband UV–NIR photodetectors

  • 期刊论文

  • 发表日期：

    2025年9月27日

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  • Wei Chen,
  • Qinggang Qin,
  • Kunxuan Liu,
  • Xiaofei Ma,
  • Xue Liu,
  • Zhengyu Xu,
  • Lin Wu,
  • Zhifan Qiu,
  • Xiaodi Luo,
  • Jiahao Li,
  • Yuen Hong Tsang,
  • Liang Li

摘要

Immense potential has been demonstrated by photodetectors based on two-dimensional (2D) van der Waals heterostructures (vdWHs), positioning them as a transformative technology for numerous applications in modern nanotechnology. However, 2D vdWHs photodetectors based on photoconductive effects require an external power input and are often accompanied by a large dark current, which hinders the development of miniaturization and portability of devices and greatly limits the application of devices in complex environments. In this paper, a type-Ι self-powered polarization-sensitive photodetector based on ReSe2/PtS2 van der Waals heterojunction is constructed, which has excellent photovoltaic characteristics. The type-I band alignment facilitates the collection of photogenerated holes from the ReSe2 layer by the PtS2 layer, thereby inhibiting carrier recombination. Enabled by the strong built-in electric field, a self-powered photoresponse with a wide spectrum from 365 to 1064 nm is realized. At zero bias voltage, the device achieves a high detectivity of 1.96 × 1011 Jones and a high light on/off ratio of over 104 under the irradiation of 685 nm light. It also has a fast response speed of 4/4 ms and the photocurrent anisotropy ratio reaches 1.2 at 638 nm light. In addition, we verified the device’s polarization imaging capability. This work paves the way for the development of high-performance type-Ι photodetectors with self-powered polarization-sensitive light detection and polarization imaging capabilities.