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<p>High-quality di-indium disulfide (In<sub>2</sub>S<sub>2</sub>) thin films were fabricated using chemical vapor deposition (CVD) for the first time. X-ray diffraction (XRD) confirmed crystallinity, while X-ray photoelectron spectroscopy (XPS) identified sulfur vacancies in thinner films and detailed their chemical composition. Scanning electron microscopy (SEM) revealed uniform surface morphology, providing insights into mean grain size and surface roughness. Raman spectroscopy revealed thickness-dependent shifts in peak positions, indicating changes in chemical bond lengths. Photoluminescence (PL) analysis showed broad emission bands and redshifts with increasing thickness, suggesting excitonic emission and structural variations. Absorption coefficients were consistently high (10<sup>4</sup> ~ 10<sup>5</sup>&#xa0;cm<sup>−1</sup>) across films of varying thicknesses (421.1 ~ 595.9&#xa0;nm), with systematic peak shifts linked to changes in electronic band structure. Ellipsometry revealed a thickness-dependent energy gap (1.25 ~ 1.61&#xa0;eV). DFT calculations validated the band gap, material stability, and Raman spectrum, aligning well with experimental data. These results highlight In<sub>2</sub>S<sub>2</sub> thin films’ potential for optoelectronic and photovoltaic applications, emphasizing their tunable optical properties and growth stability.</p>

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Controlled growth of In2S2 thin films via CVD and their optical properties for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2025年9月23日

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  • Elbadawy A. Kamoun,
  • Ahmed I. Ali,
  • A. H. Ammar,
  • A. A. M. Farag,
  • Ahsan Javed,
  • Dongwhi Choi,
  • Mohammed Salah Ayoup,
  • Amr Negm,
  • Amany S. El-Khouly,
  • M. Y. Nassar,
  • Ibrahim Elghamry,
  • Dong Yong Park

摘要

High-quality di-indium disulfide (In2S2) thin films were fabricated using chemical vapor deposition (CVD) for the first time. X-ray diffraction (XRD) confirmed crystallinity, while X-ray photoelectron spectroscopy (XPS) identified sulfur vacancies in thinner films and detailed their chemical composition. Scanning electron microscopy (SEM) revealed uniform surface morphology, providing insights into mean grain size and surface roughness. Raman spectroscopy revealed thickness-dependent shifts in peak positions, indicating changes in chemical bond lengths. Photoluminescence (PL) analysis showed broad emission bands and redshifts with increasing thickness, suggesting excitonic emission and structural variations. Absorption coefficients were consistently high (104 ~ 105 cm−1) across films of varying thicknesses (421.1 ~ 595.9 nm), with systematic peak shifts linked to changes in electronic band structure. Ellipsometry revealed a thickness-dependent energy gap (1.25 ~ 1.61 eV). DFT calculations validated the band gap, material stability, and Raman spectrum, aligning well with experimental data. These results highlight In2S2 thin films’ potential for optoelectronic and photovoltaic applications, emphasizing their tunable optical properties and growth stability.