<p>PbTe-based thermoelectric materials have attracted considerable attention for their high energy conversion efficiency. Here, we present a synergistic strategy combining Bi<sub>2</sub>Te<sub>3</sub> alloying and iodine doping to enhance the thermoelectric performance of n-type PbTe. Bi<sub>2</sub>Te<sub>3</sub> incorporation induces lattice contraction and grain refinement, producing multi-scale phonon scattering. Importantly, iodine acts as an efficient electron donor and simultaneously introduces point defects, further reducing lattice thermal conductivity to ~&#xa0;0.55 W m<sup>−1</sup>&#xa0;K<sup>−1</sup>. The optimized composition, PbTe<sub>0.992</sub>I<sub>0.008</sub>–0.5% Bi<sub>2</sub>Te<sub>3</sub>, achieves a peak figure of merit (ZT) of ~ 1.1 at 823&#xa0;K, exceeding the Bi<sub>2</sub>Te<sub>3</sub>-only doped sample by over 150%. This work demonstrates that concurrent tuning of electronic and phonon transport through a straightforward dual-doping approach provides a rational pathway for designing high-performance n-type PbTe thermoelectric materials.</p>

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Enhanced thermoelectric performance of n-type PbTe via synergistic Bi2Te3 alloying and iodine doping

  • Yin Zhou,
  • Xiangzhao Zhang,
  • Jing Wang,
  • Xiukuang Zhang,
  • Anqi Cai,
  • Jian Yang

摘要

PbTe-based thermoelectric materials have attracted considerable attention for their high energy conversion efficiency. Here, we present a synergistic strategy combining Bi2Te3 alloying and iodine doping to enhance the thermoelectric performance of n-type PbTe. Bi2Te3 incorporation induces lattice contraction and grain refinement, producing multi-scale phonon scattering. Importantly, iodine acts as an efficient electron donor and simultaneously introduces point defects, further reducing lattice thermal conductivity to ~ 0.55 W m−1 K−1. The optimized composition, PbTe0.992I0.008–0.5% Bi2Te3, achieves a peak figure of merit (ZT) of ~ 1.1 at 823 K, exceeding the Bi2Te3-only doped sample by over 150%. This work demonstrates that concurrent tuning of electronic and phonon transport through a straightforward dual-doping approach provides a rational pathway for designing high-performance n-type PbTe thermoelectric materials.