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<p>Thallium- and indium-doped cesium iodide&#xa0;(CsI:Tl and CsI:In) were synthesized by the inverse temperature crystallization method and were comprehensively evaluated for their optical and scintillation properties. CsI:Tl crystals exhibited a broad emission band peaking at 550&#xa0;nm, attributed to the <sup>3</sup>P<sub>1</sub>–<sup>1</sup>S<sub>0</sub> transitions of Tl<sup>+</sup> ions, with high photoluminescence quantum yield&#xa0;(~ 99.9%) and scintillation light yield&#xa0;(<i>LY</i>, 45,000&#xa0;photons/MeV). CsI:In samples exhibited an emission peak centered at 550&#xa0;nm, attributed to the <sup>3</sup>P<sub>1</sub>–<sup>1</sup>S<sub>0</sub> transitions of In<sup>+</sup> ions, with a high photoluminescence quantum yield&#xa0;(~ 96.7%) and medium scintillation <i>LY</i>&#xa0;(8,100&#xa0;photons/MeV).</p>

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Scintillation properties of CsI:Tl and CsI:In single crystals grown by the inverse temperature crystallization method

  • 期刊论文

  • 发表日期：

    2025年9月17日

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  • Itsuki Gonda,
  • Keishi Yamabayashi,
  • Daisuke Nakauchi,
  • Yutaka Fujimoto,
  • Hiroki Kawamoto,
  • Takumi Kato,
  • Noriaki Kawaguchi,
  • Keisuke Asai,
  • Takayuki Yanagida

摘要

Thallium- and indium-doped cesium iodide (CsI:Tl and CsI:In) were synthesized by the inverse temperature crystallization method and were comprehensively evaluated for their optical and scintillation properties. CsI:Tl crystals exhibited a broad emission band peaking at 550 nm, attributed to the 3P1–1S0 transitions of Tl+ ions, with high photoluminescence quantum yield (~ 99.9%) and scintillation light yield (LY, 45,000 photons/MeV). CsI:In samples exhibited an emission peak centered at 550 nm, attributed to the 3P1–1S0 transitions of In+ ions, with a high photoluminescence quantum yield (~ 96.7%) and medium scintillation LY (8,100 photons/MeV).