Scholarlink

<p>Fe-doped ZnS<sub><i>x</i></sub>Se<sub>1−<i>x</i></sub> thin films at different concentrations of Fe (0.42, 0.88, 2.05, and 3.99 at%) have been synthesized using a simple, cost-effective solution-based technique. X-ray diffraction studies and high-resolution transmission electron microscope micrographs revealed that the films were polycrystalline and had a cubic zinc blende structure. The crystallite size decreased from 5 to 3&#xa0;nm with increasing Fe concentration. The lattice strain calculated through the Williamson-Hall plot increases with the increase of Fe concentration. Field emission scanning electron microscope images revealed homogeneous and compact surface morphology at lower doping concentrations. The presence of spherical-shaped grains at higher doping concentration was confirmed by transmission electron microscope images. The optical band gap decreases from 3.39 to 3.27&#xa0;eV with increased Fe concentration. An improvement in the electrical conductivity values with Fe doping concentration was observed for the films. Thus, Fe doping has shown some significant impact on various properties of ZnSSe films used in various optoelectronic applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Synthesis of Fe-doped ZnSxSe1−x thin films at low temperature: Impact of doping concentration on its crystallinity, morphology, optical, and electrical properties

  • 期刊论文

  • 发表日期：

    2025年9月21日

查看全文
  • Mridusmita Boruah,
  • Prasanta Kumar Saikia

摘要

Fe-doped ZnSxSe1−x thin films at different concentrations of Fe (0.42, 0.88, 2.05, and 3.99 at%) have been synthesized using a simple, cost-effective solution-based technique. X-ray diffraction studies and high-resolution transmission electron microscope micrographs revealed that the films were polycrystalline and had a cubic zinc blende structure. The crystallite size decreased from 5 to 3 nm with increasing Fe concentration. The lattice strain calculated through the Williamson-Hall plot increases with the increase of Fe concentration. Field emission scanning electron microscope images revealed homogeneous and compact surface morphology at lower doping concentrations. The presence of spherical-shaped grains at higher doping concentration was confirmed by transmission electron microscope images. The optical band gap decreases from 3.39 to 3.27 eV with increased Fe concentration. An improvement in the electrical conductivity values with Fe doping concentration was observed for the films. Thus, Fe doping has shown some significant impact on various properties of ZnSSe films used in various optoelectronic applications.