Enhanced electrical properties and good thermal stability in (1-x)Pb(Sb1/2Nb1/2)(Zr0.52Ti0.48)O3-xBiAlO3 piezoceramics
摘要
The piezoelectric materials with superior environmental adaptability are needed for the development of technology. In this study, the impact of BiAlO3 doping content on the structure, microstructure, dielectric, piezoelectric properties and thermal stability of (1-x)Pb(Sb1/2Nb1/2)0.02(Zr0.52Ti0.48)0.98O3-xBiAlO3 (abbreviated as (1-x)(PSN-PZT)-xBA, x = 0.000, 0.010, 0.015, 0.020) ceramics were systematically investigated. The Rietveld refinement of XRD data indicated a non-monotonic variation in tetragonality (c/a ratio) with an increasing BiAlO3 (BA) content, exemplified by an initial decrease to the minimum value c/a = 1.008 for the x = 0.010 sample, with subsequent increase at higher doping levels. Microstructural and ferroelectric characterizations demonstrate that BA doping leads to significant grain refinement, an increased coercive field, and enhanced polarizability. The optimized electrical properties of εr = 847, d33 = 340 pC/N, kp = 0.658, Qm = 70 and TC = 337 ℃ were achieved for the x = 0.010 sample. Furthermore, a large strain value of 0.25%, with normalized strain d33* = 832 pC/N and low strain hysteresis HS = 9.35% were obtained at temperature of 180 ℃ for the same sample. The thermal stability measurements of kp and d33 of (1-x)(PSN-PZT)-xBA ceramics demonstrated that BA doping improved the temperature stability of PSN-PZT ceramics. Consequently, the favorable electrical properties and robust temperature stability render the x(PSN-PZT)-xBA piezoceramics suitable for high-temperature applications.