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<p>Silicon-based photodetectors dominate commercial applications due to their near-infrared sensitivity and mature fabrication, yet their limited UV spectral range restricts broadband detection. Meanwhile, two-dimensional perovskites like Ca<sub>2</sub>Nb<sub>3</sub>O<sub>10</sub> (CNO) exhibit superior UV responsivity but face challenges in visible-light utilization. To synergize these complementary advantages, we engineered a heterojunction by integrating silicon nanowires (Si NWs) with CNO nanosheets. The Si NWs/CNO heterojunction achieves&#xa0;broad-spectrum detection spanning UV (300&#xa0;nm) to visible (700&#xa0;nm), which demonstrates a responsivity of&#xa0;40.8 A/W&#xa0;and detectivity of&#xa0;6.71 × 10<sup>11</sup> Jones under 300&#xa0;nm UV illumination. In the visible region (500&#xa0;nm), the responsivity reaches&#xa0;0.65 A/W, 60 times higher than that of pure p-Si NWs. Rapid response/recovery times (0.57&#xa0;s/0.59&#xa0;s) and a&#xa0;623-fold photocurrent switching ratio&#xa0;further evidenced its enhanced performance. This work bridges the gap between silicon and perovskite technologies, offering a universal strategy for next-generation optoelectronic systems.</p>

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Broad-spectrum photodetectors based on p-Si nanowires/n-Ca2Nb3O10 heterojunction

  • 期刊论文

  • 发表日期：

    2025年9月9日

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  • Xingyu Liu,
  • Yifan Xiong,
  • Lang Gu,
  • Zhiheng Liu,
  • Fanrui Kong,
  • Rui Shi,
  • Sancan Han

摘要

Silicon-based photodetectors dominate commercial applications due to their near-infrared sensitivity and mature fabrication, yet their limited UV spectral range restricts broadband detection. Meanwhile, two-dimensional perovskites like Ca2Nb3O10 (CNO) exhibit superior UV responsivity but face challenges in visible-light utilization. To synergize these complementary advantages, we engineered a heterojunction by integrating silicon nanowires (Si NWs) with CNO nanosheets. The Si NWs/CNO heterojunction achieves broad-spectrum detection spanning UV (300 nm) to visible (700 nm), which demonstrates a responsivity of 40.8 A/W and detectivity of 6.71 × 1011 Jones under 300 nm UV illumination. In the visible region (500 nm), the responsivity reaches 0.65 A/W, 60 times higher than that of pure p-Si NWs. Rapid response/recovery times (0.57 s/0.59 s) and a 623-fold photocurrent switching ratio further evidenced its enhanced performance. This work bridges the gap between silicon and perovskite technologies, offering a universal strategy for next-generation optoelectronic systems.