Scholarlink

<p>We have fabricated thin films of spin crossover (SCO) compound [Fe(phen)<sub>2</sub>(NCS)<sub>2</sub>] on glass substrate of different thicknesses (170–300&#xa0;nm). The films show optical absorption peaks c.a. 539–542&#xa0;nm confirming the growth of the films. Structural characterizations obtained from SEM and XRD studies revealed the crystalline growth of the thin films. The pronounced thermal hysteresis loop observed in magnetization data clearly reveals the bistability of spin states. The electrical characteristics of the films obtained through current–voltage (<i>I-V</i>) measurements show thermal spin state switching (high spin ↔ low spin) with prominent hysteresis loop. The width of the loop (Δ) has significantly increased with the reduction in temperature as well as increase in film thickness. The results could be attributed to the molecule–substrate interaction and cooperative interaction between the magnetic centers of SCO complex. This spin state dynamics of the SCO transition dependent on the molecular layer thickness is crucial for optimizing molecular materials in fabricating electronic devices, sensors, and spin-based memory devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Thickness-dependent spin state switching in [Fe(phen)2(NCS)2] molecular thin films

  • 期刊论文

  • 发表日期：

    2025年9月8日

查看全文
  • Saroj Saha,
  • Mou Gorai,
  • Paramesh Chandra,
  • Swapan K. Mandal

摘要

We have fabricated thin films of spin crossover (SCO) compound [Fe(phen)2(NCS)2] on glass substrate of different thicknesses (170–300 nm). The films show optical absorption peaks c.a. 539–542 nm confirming the growth of the films. Structural characterizations obtained from SEM and XRD studies revealed the crystalline growth of the thin films. The pronounced thermal hysteresis loop observed in magnetization data clearly reveals the bistability of spin states. The electrical characteristics of the films obtained through current–voltage (I-V) measurements show thermal spin state switching (high spin ↔ low spin) with prominent hysteresis loop. The width of the loop (Δ) has significantly increased with the reduction in temperature as well as increase in film thickness. The results could be attributed to the molecule–substrate interaction and cooperative interaction between the magnetic centers of SCO complex. This spin state dynamics of the SCO transition dependent on the molecular layer thickness is crucial for optimizing molecular materials in fabricating electronic devices, sensors, and spin-based memory devices.