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<p>The ZnO/ZnS composite (Z1) and Cu-doped ZnO/ZnS composite (Z2) thin films were fabricated utilizing the facile chemical bath deposition technique. The various characterization techniques such as the field-emission scanning electron microscopy, X-ray diffraction, UV–visible and photoluminescence spectroscopy, were employed to investigate the influence of copper (Cu) doping. Photoluminescence emission spectra revealed defects at the interstitial sites, validating the doping of Cu in the host ZnO/ZnS composite matrix. The mismatch in lattice parameters, owing to dissimilar atomic sizes of Cu and Zn, may alter the growth mechanism and may inhibit further crystallization in the films. The current (I)—voltage (V) characteristics shows the typical diode behaviour of Z1/<i>p</i>-Si and Z2/<i>p</i>-Si heterojunctions. The enhanced photo response parameters show the potential use of Z1/<i>p</i>-Si and Z2/<i>p</i>-Si heterojunctions as efficient photodetectors. The faster rise and decay times for sample Z2 (<i>τ</i><sub><i>r</i></sub> = 1.27&#xa0;s and <i>τ</i><sub><i>d</i></sub> = 1.30&#xa0;s) than that of sample Z1 (<i>τ</i><sub><i>r</i></sub> = 1.30&#xa0;s and <i>τ</i><sub><i>d</i></sub> = 1.32&#xa0;s) can be attributed to copper doping, which improves the ejection rate of photogenerated carriers from the depletion region. A notable increase in the responsivity (R<sub>S</sub>) from 2.83&#xa0;mA/W (ZnO/ZnS) to 15.56&#xa0;mA/W for sample Z2 (Cu:ZnO/ZnS) showcases the potential use of these thin films for visible light photodetectors in optical communication, switching devices, flexible microelectronics, and light imaging.</p>

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Effect of Cu doping on ZnO/ZnS composite thin film for visible light photodetection

  • 期刊论文

  • 发表日期：

    2025年8月28日

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  • Ajeet Gupta,
  • Avneesh Kumar,
  • Arun Kumar,
  • Surbhi,
  • Himanshu Sharma,
  • Sandeep Kumar,
  • Mudit P. Srivastava,
  • Devendra Kumar Rana

摘要

The ZnO/ZnS composite (Z1) and Cu-doped ZnO/ZnS composite (Z2) thin films were fabricated utilizing the facile chemical bath deposition technique. The various characterization techniques such as the field-emission scanning electron microscopy, X-ray diffraction, UV–visible and photoluminescence spectroscopy, were employed to investigate the influence of copper (Cu) doping. Photoluminescence emission spectra revealed defects at the interstitial sites, validating the doping of Cu in the host ZnO/ZnS composite matrix. The mismatch in lattice parameters, owing to dissimilar atomic sizes of Cu and Zn, may alter the growth mechanism and may inhibit further crystallization in the films. The current (I)—voltage (V) characteristics shows the typical diode behaviour of Z1/p-Si and Z2/p-Si heterojunctions. The enhanced photo response parameters show the potential use of Z1/p-Si and Z2/p-Si heterojunctions as efficient photodetectors. The faster rise and decay times for sample Z2 (τr = 1.27 s and τd = 1.30 s) than that of sample Z1 (τr = 1.30 s and τd = 1.32 s) can be attributed to copper doping, which improves the ejection rate of photogenerated carriers from the depletion region. A notable increase in the responsivity (RS) from 2.83 mA/W (ZnO/ZnS) to 15.56 mA/W for sample Z2 (Cu:ZnO/ZnS) showcases the potential use of these thin films for visible light photodetectors in optical communication, switching devices, flexible microelectronics, and light imaging.