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<p>The bilayer thin film consists of sputtered Zr and Sm on 4H-SiC substrate electrical and structural characterization was evaluated. The sputtered bilayer underwent dry thermal oxidation by varying gas concentration ratio of O<sub>2</sub> and N<sub>2</sub>O. The monoclinic phase of Sm<sub>2</sub>O<sub>3</sub> and ZrO<sub>2</sub> in amorphous state was detected in XRD analysis. The revelation of amorphous bilayers revealed thickness in range of 7.95 to 8.42&#xa0;nm via high-resolution transmission electron microscope (HRTEM) analysis. The band alignment modification exposed conduction band offsets (CBO) in the range of 2.24 to 2.59&#xa0;eV. As the incorporation of N<sub>2</sub>O affected the electrical properties where the 50% O<sub>2</sub>: 50% N<sub>2</sub>O has been revealed the highest electrical breakdown field, <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10854_2025_15607_Article_IEq1.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="35" /> </InlineMediaObject> <EquationSource Format="TEX">\({E}_{BD}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>E</mi> <mrow> <mi mathvariant="italic">BD</mi> </mrow> </msub> </math></EquationSource> </InlineEquation> of 9.8 MV/cm at a leakage current <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10854_2025_15607_Article_IEq2.gif" Format="GIF" Height="19" Rendition="HTML" Resolution="72" Type="Linedraw" Width="18" /> </InlineMediaObject> <EquationSource Format="TEX">\({J}_{g}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>J</mi> <mi>g</mi> </msub> </math></EquationSource> </InlineEquation> of 10<sup>–6</sup> A/cm. At this concentration ratio, it also has the highest capacitance of 3.42 µF/cm<sup>2</sup> with a dielectric constant, <InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10854_2025_15607_Article_IEq3.gif" Format="GIF" Height="14" Rendition="HTML" Resolution="72" Type="Linedraw" Width="13" /> </InlineMediaObject> <EquationSource Format="TEX">\(k\)</EquationSource> <EquationSource Format="MATHML"><math> <mi>k</mi> </math></EquationSource> </InlineEquation> value of ~ 28.79. The Fowler–Nordheim (FN) tunneling conduction mechanism dominates in this work exposed barrier height, <InlineEquation ID="IEq4"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="10854_2025_15607_Article_IEq4.gif" Format="GIF" Height="16" Rendition="HTML" Resolution="72" Type="Linedraw" Width="24" /> </InlineMediaObject> <EquationSource Format="TEX">\({\Phi }_{B}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi mathvariant="normal">Φ</mi> <mi>B</mi> </msub> </math></EquationSource> </InlineEquation> at 0.92&#xa0;eV. The combination of Sm<sub>2</sub>O<sub>3</sub> and ZrO<sub>2</sub> in a bilayer gate stack shows promising features that suitable as a high-<i>k</i> gate dielectrics to be used in MOS-based technologies.</p>

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Electrical performance of Sm2O3/ZrO2 gate stacks on 4H-SiC via various O2/N2O gas concentrations

  • 期刊论文

  • 发表日期：

    2025年9月5日

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  • Ahmad Hafiz Jafarul Tarek,
  • Tahsin Ahmed Mozaffor Onik,
  • Chia Ching Kee,
  • Chin Wei Lai,
  • Bushroa Abd Razak,
  • Prastika Krisma Jiwanti,
  • Nurliyana Abu Hasan Sazalli,
  • Shuye Zhang,
  • Yew Hoong Wong

摘要

The bilayer thin film consists of sputtered Zr and Sm on 4H-SiC substrate electrical and structural characterization was evaluated. The sputtered bilayer underwent dry thermal oxidation by varying gas concentration ratio of O2 and N2O. The monoclinic phase of Sm2O3 and ZrO2 in amorphous state was detected in XRD analysis. The revelation of amorphous bilayers revealed thickness in range of 7.95 to 8.42 nm via high-resolution transmission electron microscope (HRTEM) analysis. The band alignment modification exposed conduction band offsets (CBO) in the range of 2.24 to 2.59 eV. As the incorporation of N2O affected the electrical properties where the 50% O2: 50% N2O has been revealed the highest electrical breakdown field, \({E}_{BD}\) E BD of 9.8 MV/cm at a leakage current \({J}_{g}\) J g of 10–6 A/cm. At this concentration ratio, it also has the highest capacitance of 3.42 µF/cm2 with a dielectric constant, \(k\) k value of ~ 28.79. The Fowler–Nordheim (FN) tunneling conduction mechanism dominates in this work exposed barrier height, \({\Phi }_{B}\) Φ B at 0.92 eV. The combination of Sm2O3 and ZrO2 in a bilayer gate stack shows promising features that suitable as a high-k gate dielectrics to be used in MOS-based technologies.