Tailoring photoluminescence and dielectric performance in La₂O₃/SnO₂ nanocomposites for advanced semiconductor and optoelectronic applications
摘要
This study investigates the structural, optical, and electrical properties of La₂O₃ and La₂O₃/SnO₂ nanocomposites, with applications in microelectronics and optoelectronics. SnO₂ improves the photoluminescence and dielectric properties of La₂O₃. La₂O₃ exhibits emission peaks at 592 nm, 651 nm, and 710 nm, with 85% color purity. La₂O₃/SnO₂ composites demonstrate reduced color fidelity (60–65%), a transition from orange-red to UV-blue, and emissions at 322–379 nm, with a peak at 358 nm (~ 350 a.u.). Electrical experiments demonstrate a transition from grain-dominated conduction in La₂O₃ to mixed conduction in composites. This is evidenced by a 40% reduction in real impedance (Z′), which suggests enhanced carrier mobility from Sn4⁺-induced oxygen vacancies. The Maxwell–Wagner and Koop models are supported by the composites' improved AC conductivity and dielectric relaxation. The composites exhibit potential for use in high-efficiency UV light-emitting devices due to their shift in emission energy and a CCT of 9800 K.