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<p>The Al<sub><i>x</i></sub>Ni<sub>1−<i>x</i></sub>TiO<sub>3+δ</sub> (<i>x</i> = 0.2, 0.4, 0.6 &amp; 0.8) (ANT) nanoparticles are synthesized via hydrothermal method. The X-ray diffraction patterns reveal the tetragonal structure having few secondary phase structures. The crystallite size ‘D’ value is varying unsystematically between 51.14 ± 0.914 and 66.32 ± 0.384&#xa0;nm as a function of Al-content. The W–H plots are drawn to find the internal microstrain. The microstructure shows the clustered nature of ANT revealing the existence of interactions among the nanoparticles. The optical bandgap (<i>E</i><sub>g</sub>) values are determined using Tauc’s plots and decreasing with an increase of Al-content. The high dielectric constant, and loss values are noted for <i>x</i> = 0.2, and for <i>x</i> = 0.4–0.6, a little less magnitude (as compared to <i>x</i> = 0.2) is noted. These lossy materials may be suggested for the microwave dielectric absorber applications in the fields of electronics and energy. The electrical conduction mechanism is illustrated by means of dielectric modulus, ac-electrical conductivity, and impedance analysis. The impedance analysis provides the low grain (<i>R</i><sub>g</sub> ~ 29,410.7 Ω) and the high grain boundary (<i>R</i><sub>gb</sub> ~ 47,065.8 Ω) resistance values for x = 0.4. The bulk conductivity values (for <i>x</i> = 0.4) are noted to be 5.411 × 10<sup>–6</sup> S/cm &amp; 3.381 × 10<sup>–6</sup> S/cm as the contributions of grain and grain boundaries, respectively.</p>

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AlxNi1−xTiO3+δ (x = 0.2–0.8) nanomaterials for dielectric absorber applications

  • 期刊论文

  • 发表日期：

    2025年8月25日

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  • K. Bharathi,
  • K. Chandra Babu Naidu,
  • Eshwarappa Veena,
  • Madunuri Chandrasekhar,
  • D. Baba Basha,
  • L. Siva Sankara Reddy

摘要

The AlxNi1−xTiO3+δ (x = 0.2, 0.4, 0.6 & 0.8) (ANT) nanoparticles are synthesized via hydrothermal method. The X-ray diffraction patterns reveal the tetragonal structure having few secondary phase structures. The crystallite size ‘D’ value is varying unsystematically between 51.14 ± 0.914 and 66.32 ± 0.384 nm as a function of Al-content. The W–H plots are drawn to find the internal microstrain. The microstructure shows the clustered nature of ANT revealing the existence of interactions among the nanoparticles. The optical bandgap (Eg) values are determined using Tauc’s plots and decreasing with an increase of Al-content. The high dielectric constant, and loss values are noted for x = 0.2, and for x = 0.4–0.6, a little less magnitude (as compared to x = 0.2) is noted. These lossy materials may be suggested for the microwave dielectric absorber applications in the fields of electronics and energy. The electrical conduction mechanism is illustrated by means of dielectric modulus, ac-electrical conductivity, and impedance analysis. The impedance analysis provides the low grain (Rg ~ 29,410.7 Ω) and the high grain boundary (Rgb ~ 47,065.8 Ω) resistance values for x = 0.4. The bulk conductivity values (for x = 0.4) are noted to be 5.411 × 10–6 S/cm & 3.381 × 10–6 S/cm as the contributions of grain and grain boundaries, respectively.