<p>In this study, the (Zn<sub>1</sub>₋<sub>x</sub>Sr<sub>x</sub>)SnO<sub>3</sub> (0.0 ≤ <i>x</i> ≤ 0.6) ceramic compositions were synthesized via the conventional solid-state route at a sintering temperature of 920&#xa0;°C. The influence of Sr<sup>2+</sup> doping on the structural, microstructural, elemental, optical, and dielectric properties of the ZnSnO<sub>3</sub> base ceramics has been investigated. The orthorhombic and FCC structure of the base sample has been confirmed by X-ray diffractometry (XRD) analysis. The major peak (012) shifted toward the larger Bragg’s angle, and decreased peak intensity is due to the variation of ionic radii of doped and host elements. The average crystallite size increases from 531 to 586&#xa0;nm with increasing Sr<sup>2+</sup> contents. The scanning electron microscopy (SEM) micrograph shows pores among the different sizes of grains. The Fourier-transform infrared spectrometry (FTIR) spectra showed a wide range of bands, from faint to strong, indicating the existence of several linked functional groups. This analysis provided more evidence of metal–oxygen vibrations and helped to identify additional prominent infrared modes. The photoluminescence spectrometry (PL) spectra revealed that the calculated excitation energy for each peak at 650, 688.94, 714.42, 734.17, 743.39, 765.72, and 791.50&#xa0;nm is 1.90, 1.80, 1.73, 1.69, 1.66, 1.62, and 1.56&#xa0;eV, respectively. The microwave dielectric properties are measured by using impedance analyzer spectroscopy and reported that the dielectric losses decrease and AC conductivity increases with increasing operating frequency. The band gap energy calculated from UV–Vis plots for contents <i>x</i> = 0.0, 0.2, 0.4, and 0.6 are 2.63&#xa0;eV, 2.34&#xa0;eV, 2.32&#xa0;eV, and 2.23&#xa0;eV, respectively. The overall optimum results are helpful for many applications, i.e., microwave wireless communication devices, dielectric resonator antennae, satellite base station applications, etc.</p>

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A-site cation doping of Sr2+ to improve the structural, optical, and dielectric properties of ZnSnO3 perovskite: experimental and DFT insight

  • Younus Mahmood,
  • Asad Ali,
  • Abid Zaman,
  • Tanveer Ahmad,
  • Aiyeshah Alhodaib,
  • Salhah Hamed Alrefaee,
  • Shaxnoza Saydaxmetova,
  • Abdullah,
  • Jisang Hong,
  • Vineet Tirth,
  • Ali Algahtani,
  • Wali Ullah Khan

摘要

In this study, the (Zn1xSrx)SnO3 (0.0 ≤ x ≤ 0.6) ceramic compositions were synthesized via the conventional solid-state route at a sintering temperature of 920 °C. The influence of Sr2+ doping on the structural, microstructural, elemental, optical, and dielectric properties of the ZnSnO3 base ceramics has been investigated. The orthorhombic and FCC structure of the base sample has been confirmed by X-ray diffractometry (XRD) analysis. The major peak (012) shifted toward the larger Bragg’s angle, and decreased peak intensity is due to the variation of ionic radii of doped and host elements. The average crystallite size increases from 531 to 586 nm with increasing Sr2+ contents. The scanning electron microscopy (SEM) micrograph shows pores among the different sizes of grains. The Fourier-transform infrared spectrometry (FTIR) spectra showed a wide range of bands, from faint to strong, indicating the existence of several linked functional groups. This analysis provided more evidence of metal–oxygen vibrations and helped to identify additional prominent infrared modes. The photoluminescence spectrometry (PL) spectra revealed that the calculated excitation energy for each peak at 650, 688.94, 714.42, 734.17, 743.39, 765.72, and 791.50 nm is 1.90, 1.80, 1.73, 1.69, 1.66, 1.62, and 1.56 eV, respectively. The microwave dielectric properties are measured by using impedance analyzer spectroscopy and reported that the dielectric losses decrease and AC conductivity increases with increasing operating frequency. The band gap energy calculated from UV–Vis plots for contents x = 0.0, 0.2, 0.4, and 0.6 are 2.63 eV, 2.34 eV, 2.32 eV, and 2.23 eV, respectively. The overall optimum results are helpful for many applications, i.e., microwave wireless communication devices, dielectric resonator antennae, satellite base station applications, etc.