<p>The present work aims to prepare polystyrene (PS) doped with metal oxides (SiO₂–CeO₂) nanostructures and improve its properties for use in optoelectronics fields at low cost, lightweight and excellent chemical, and mechanical properties. The structural and optical properties of PS/SiO₂–CeO₂ NCs were investigated. Field emission scanning electron microscopy (FE-SEM) and optical microscopy (OM) were used to investigate the morphology of the nanostructures. The obtained results showed that the distribution is good homogeneous. The results showed that the absorbance of PS increased by about 78.5% at a wavelength of 280&#xa0;nm, while the transmittance decreased by about 19.7% when the ratio of SiO₂–CeO₂ NPs increased to 6.9 wt%. The energy gap of PS dropped from 3.6 to 2.8&#xa0;eV as the ratio of SiO₂–CeO₂ NPs risen to 6.9 wt%. These results indicate the PS/SiO₂–CeO₂ nanostructures may be applied in optics and electronics fields. The other optical factors were improved with rising SiO₂–CeO₂ NPs lead to make the PS/SiO₂–CeO₂ nanostructures are suitable for optoelectronics applications. The PS/SiO₂–CeO₂ nanostructures were tested for gamma radiation shielding. The results demonstrated the PS/SiO₂–CeO₂ nanostructures have high attenuation coefficient. The final results showed that the PS/SiO₂–CeO₂ nanostructures have remarkable properties which make them suitable to be used in the future optoelectronics and industrial applications.</p>