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<p>Gallium nitride (GaN) exhibits distinct properties, but issues with substrate compatibility, leading to material defects, limit its optoelectronic functional properties, resulting in reduced external quantum efficiency (EQE) behaviour. This research aims to address the consequences above and enhance the overall optoelectronic functionality of GaN, configured with varying thicknesses of silicon carbide (SiC) layer formed via hydride vapour phase epitaxy (HVPE). The final structure consists of a p-GaN layer (100&#xa0;nm), an electron blocking layer (AlGaN-20&#xa0;nm), active region (InGaN/GaN MQWs 10&#xa0;nm), n-GaN layer (GaN 2&#xa0;µm), buffer layer (AlGaN-200&#xa0;nm), and substrate (SiC—0, 100, 200, 300, and 400). The impact of SiC layer thickness on the optoelectronic characteristics of GaN-based semiconductors was examined. The GaN-based LED using a 400&#xa0;nm SiC substrate demonstrated optimal performance, with a breakdown voltage of 151&#xa0;V, a drain current of 216&#xa0;mA, and an RF power output of 4.5 W. An electroluminescence (EL) peak was observed at a wavelength of 450&#xa0;nm with an intensity of 190 arbitrary units (a.u.). The external quantum efficiency (EQE) reached 11.6% at the 400&#xa0;nm SiC thickness, alongside a lasing threshold of 3.5 kA/cm<sup>2</sup>.</p>

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Hydride vapour phase epitaxy processing and enhancement of optoelectronic behaviour of gallium nitride compound semiconductor featured with silicon carbide layer

  • 期刊论文

  • 发表日期：

    2025年8月24日

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  • K. Revathi,
  • N. Nagabhooshanam,
  • Pragati Gajbhiye,
  • Ankur Kulshreshta,
  • S. M. Indumathi,
  • A. Samyul,
  • G. S. V. Seshu Kumar,
  • R. Srinivasan,
  • S. Sathiyamurthy

摘要

Gallium nitride (GaN) exhibits distinct properties, but issues with substrate compatibility, leading to material defects, limit its optoelectronic functional properties, resulting in reduced external quantum efficiency (EQE) behaviour. This research aims to address the consequences above and enhance the overall optoelectronic functionality of GaN, configured with varying thicknesses of silicon carbide (SiC) layer formed via hydride vapour phase epitaxy (HVPE). The final structure consists of a p-GaN layer (100 nm), an electron blocking layer (AlGaN-20 nm), active region (InGaN/GaN MQWs 10 nm), n-GaN layer (GaN 2 µm), buffer layer (AlGaN-200 nm), and substrate (SiC—0, 100, 200, 300, and 400). The impact of SiC layer thickness on the optoelectronic characteristics of GaN-based semiconductors was examined. The GaN-based LED using a 400 nm SiC substrate demonstrated optimal performance, with a breakdown voltage of 151 V, a drain current of 216 mA, and an RF power output of 4.5 W. An electroluminescence (EL) peak was observed at a wavelength of 450 nm with an intensity of 190 arbitrary units (a.u.). The external quantum efficiency (EQE) reached 11.6% at the 400 nm SiC thickness, alongside a lasing threshold of 3.5 kA/cm2.