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<p>This study presents the design, fabrication, and characterization of a novel hybrid structure integrating a reduced graphene oxide (rGO) layer with germanium quantum dots (Ge QDs) for enhanced photodetection and solar energy conversion. Ge QDs were grown via molecular beam epitaxy (MBE), forming a uniform, high-density layer of single-crystal QDs, as confirmed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). A thin rGO film was spray deposited over the Ge QDs, with Raman spectroscopy verifying its high structural quality and scanning electron microscopy (SEM) confirming uniform coverage and smooth morphology. Electrical measurements, including current–voltage, capacitance, and conductance analyses, demonstrated efficient charge transport, low leakage current, and an optimized rGO/SiO₂ interface, where Ge QDs enhanced charge injection. Under illumination, photocurrent measurements revealed strong photocurrent generation and a pronounced photovoltaic effect, highlighting the synergistic role of rGO and Ge QDs in next-generation high-performance optoelectronic devices.</p>

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Hybrid structures of rGO and Ge QDs formed by solid-state dewetting for enhanced photodetection and solar energy conversion

  • 期刊论文

  • 发表日期：

    2025年8月31日

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  • S. Amdouni,
  • Mansour Aouassa,
  • Lorenzo Torrisi,
  • Mariapompea Cutroneo,
  • M. Yahyaoui,
  • A. K. Aladim,
  • Saud A. Algarni,
  • Mohammed Ibrahim,
  • K. M. A. Saron,
  • Mohammed Bouabdellaoui,
  • Isabelle Berbezier

摘要

This study presents the design, fabrication, and characterization of a novel hybrid structure integrating a reduced graphene oxide (rGO) layer with germanium quantum dots (Ge QDs) for enhanced photodetection and solar energy conversion. Ge QDs were grown via molecular beam epitaxy (MBE), forming a uniform, high-density layer of single-crystal QDs, as confirmed by transmission electron microscopy (TEM) and atomic force microscopy (AFM). A thin rGO film was spray deposited over the Ge QDs, with Raman spectroscopy verifying its high structural quality and scanning electron microscopy (SEM) confirming uniform coverage and smooth morphology. Electrical measurements, including current–voltage, capacitance, and conductance analyses, demonstrated efficient charge transport, low leakage current, and an optimized rGO/SiO₂ interface, where Ge QDs enhanced charge injection. Under illumination, photocurrent measurements revealed strong photocurrent generation and a pronounced photovoltaic effect, highlighting the synergistic role of rGO and Ge QDs in next-generation high-performance optoelectronic devices.